Untitled
Abstract: No abstract text available
Text: Id a t e Isym REVISION RECORD 4/20/00 ” ISSUED AJJJH. DR. c Z ] NT L T 1/2 7/32 0 . 040 00 . 250 3/32 1/8 27/32 7/32 3/16 9/32 MATERIAL: COPPER FINISH: ELECTRO ACTUAL SIZE CONCORD TDLERANCES DECIMAL i .005 FRACTIONAL 1/64 P/N TITLE SCALE ELECTRONICS CORPORATION
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JTK19
Abstract: No abstract text available
Text: CNY65Exi Vishay Telefun ken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and
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CNY65Exi
CNY65Exi
50014-1977/VDE
50020-1977/VDE
95HOI5
95H0I6
CNY65
JTK19
11-Ja
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a1037
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power
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uPA1700A
a1037
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Katalog CEMI
Abstract: uca64121 UCA6400 UL1405 UL1211 UCY7400N UL1490N elektor SESCOSEM ul1402l
Text: W iadom osci ogólne WSTIJP W y d aw n ic tw a P rz e m y s lu M aszynow ego W EM A p rz e k a zujq u z y tk o w n ik o m k a ta lo g b ra n z o w y pt. P rzy rz q d y p ó lp rz e w o d n ik o w e , z a w ie ra j^ c y d o k lad n e in fo rm a c je te c h nicze dotycz^ce p rz y rz q d ó w p ó lp rze w o d n ik o w y c h p ro d u k o w a n y ch w P o lsce n a sk al$ przem y slo w ^ .
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UL1611N
1611N
UL16HN
UCC-12V
PN-73/E-04550.
Katalog CEMI
uca64121
UCA6400
UL1405
UL1211
UCY7400N
UL1490N
elektor
SESCOSEM
ul1402l
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PQ12RF11
Abstract: 05RF11
Text: Low Power-Loss Voltage Regulators PQ05RF1 Series PQ05RF1 Series 1A Output Low Power-Loss Voltage Regulators • Features ■ Outline Dimensions • Compact resin full-mold package • Low power-loss Dropout voltage : MAX.0.5V • Built-in ON/OFF control terminal (PQ05RF1/PQ05RF11
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PQ05RF1
PQ05RF1/PQ05RF11
PQ05RF1V
12Voutput
PQ09RF1
PQ12R
PQ05RF1A
PQ12RF11
05RF11
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DG37
Abstract: No abstract text available
Text: -H Y U H D A I • HYM5V72A804B N-Series Buffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM 5V72A804B N-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM m odule consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and two 16-bit BiCMOS line driver in TSSO P on a 168 pin
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HYM5V72A804B
8Mx72
5V72A804B
8Mx72-bit
HY51V16404B
16-bit
5V72A804BTNG
168-Pin
250f6
DG37
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Untitled
Abstract: No abstract text available
Text: HARKTECH INTER NAT IONAL DÖE D | 57 *1 ^ 5 5 G D D D S 41 2 | _ - r - ¥ / - % 3 T - w - m _ P h o t o I C ’S SWITCHING CHARACTERISTICS . RECOMMENDED OPERATING CONDITIONS CHARACTERISTICS SYM UNIT MT22000 MT6510 MT6500 min — Input Current - Low Level
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MT22000
MT6510
MT6500
MT2531Ã
MT25300
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SARS 03 DIAGRAM
Abstract: tc35096p SARS 03
Text: TC35096P C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC35096P 8 BIT 4-CH SERIAL I/O ANALOG TO DIGITAL CONVERTER GENERAL DESCRIPTION The TC35096P is a monolithic CMOS 8 bit successive approximation A/D converter with serial I/O and 4 channel multiplex inputs.
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TC35096P
TC35096P
400kHz
400kHz
SARS 03 DIAGRAM
SARS 03
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Untitled
Abstract: No abstract text available
Text: MN1610A M N 1 6 1 0 A 16 t * y H f - 7 T ' 7 - (2 iB ffl 16 Bit 1 Chip Microprocessor ( 2 -V o lt a g e Supply) H AS ^ /D e s c rip tio n Unit ‘ MN1610A !±, N f t / i - 'i-L O C O S « « * £ « ^ t t , 1 ft« * , z It 2C 3t 4 t 5 t 6E 7t 8t 9t 10t
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MN1610A
MN1610A
16-bit
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2SK790
Abstract: No abstract text available
Text: * » s * •* V * -* u I •i V Bf * 3o I * var So » 1 *5 m te te a H 00 Ö II to n <-*- H o t r fl} o° o° •fë \ \ 3 3 § vc w Q H to o FR TJ O W3 jjô w un ru cr ET □ o o x r ET 0ÍD i [ p» O V»/ O en Ò0 O eo 00 h o s nu A V V V ¡*r D m < < o<
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hra11Å
20kil)
2SK790
VDlfT210V
00A//Ã
2SK790
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neU jj8
Abstract: d063
Text: s z JO I. 0 ß E d ¿6/1- pssE9|ay 0 0 “ H 7'9 t " t ' l - V 3 •;u 0 ujnoop sin; jo pu 0 04 ; ;e suoisjAOjd 04 ; o; p o fq n s j 0 i|ijn|. s| 0 sn 'P0AJ0S0J s ; l|6 m uv uoji-EJodjOQ [/MGI 0SS8H0S 891 PS Q SZY YP u n u in n n n iiiiiiiiiiiiiiiiiiiiiiiiiiiij
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CSB200D
Abstract: LCD-III 2128X
Text: 4.5 LCD-Ill Low Voltage Operation 4.5.1 Electrical Characteristics 1 Absolute Maximum Ratings Symbol Item Value Unit Supply Voltage vcc -0.3 to +7.0 V Pin Voltage (1) VT1 -0.3 to Vnr+0 .3 V Pin Voltage (2) v T2 -0.3 to Maximum Total Output Current ( 1) Maximum Total Output Current
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A1035T
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 751 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion bat
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPD23N05 SPU23N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> *DS on Package Ordering Code SPD23N05 55 V 22 A 0.06 Q P-T0252
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SPD23N05
SPU23N05
P-T0252
P-T0251
Q67040
S4138
S4131
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power
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uPA1702
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A283D
Abstract: HS 455 e "halbleiterwerk frankfurt" VEB Kombinat VEB Halbleiterwerk Frankfurt halbleiterwerk TGL26713 Halbleiterwerk Frankfurt A283 frankfurt
Text: Vorläufige technische Daten A 283 D Einchip-AS /FlMSmpfängerschalfckreis mit OT-Leistungs•verstärker für Hörrundfuakempfänger Abmessungen, in qm und Anschlaßbelegaog 8 22,3 3.5 ± 0,3 . 15° 2/5 - 0,725 16 15 n 13 12 11 10 9 n n n n n n n j n o -trra-cro-nT-n-crxr
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16nach
A283D
HS 455 e
"halbleiterwerk frankfurt"
VEB Kombinat
VEB Halbleiterwerk Frankfurt
halbleiterwerk
TGL26713
Halbleiterwerk Frankfurt
A283
frankfurt
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TC4510
Abstract: TC4510BP
Text: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4510BP/BF TC4510BP/TC451OBF PRESETTABLE BCD UP/DOWN COUNTER_ T C 4 5 1 0 B P / B F is U P / D O W N d e c a d e c o u n t e r h a v i n g as yn ch ro no us R E S E T and PR ES ET functions. W h e n R E S E T i n p u t is set to " H " l e v e l , t h e c o n t e n t of
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TC4510BP/TC451OBF
TC4510BP/BF
TC4510
TC4510BP
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3284f
Abstract: BT812 OTI-077 2TT 4.00 MG CL-GD543X ati rage 3d ii ATI Rage M3 OTI64107 spitfire ATI Rage pro 128
Text: OAK TECHNOLOGY Multimedia Solutions in Silicon SPITFIRE 64-bit Multimedia GUI Accelerator OTI-64107/64105 Preliminary Specification September 1994 Oak Technology, Inc. • 139 Kifer Court • Sunnyvale, CA 94086 *Phone 408 737-0888 • FAX (408) 737-3838
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64-bit
OTI-64107/64105
OTI-64107/64105
OTI-64107
240-pin
3284f
BT812
OTI-077
2TT 4.00 MG
CL-GD543X
ati rage 3d ii
ATI Rage M3
OTI64107
spitfire
ATI Rage pro 128
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frequency divider organs
Abstract: divider lggr MN6004
Text: MOS 1C, LSI M N MN6004 6 0 0 4 W J È C M O S L S I / / C M O S L S I Frequency D iv id er for E le c tr o n ic Organs I #5 H /D e s c rip tio n MN6004 li , B i S X h 6 <n z 1C tl cm os t i i M i H i i t t . -f ^ T ii'cnz. §' ») >& 4 i’ x'fr( i t s 1=00 ; §•" ') * ir A t l ' t ' £
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MN6004
MN6004
frequency divider organs
divider
lggr
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tc35
Abstract: TC35096P SARS 03
Text: TC35096P C zMOS DIGITAL IN T E G R A T E D CIR CU IT SILICO N M O N O L IT H IC TC35096P 8 BIT 4-CH SERIAL I/O ANALOG TO DIGITAL CONVERTER GENERAL DESCRIPTION The TC35096P is a monolithic CMOS 8 bit successive approximation A/D converter with serial I/O and 4 channel multiplex inputs.
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TC35096P
TC35096P
400kHz
ANAL03
P20-24
tc35
SARS 03
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81C1501
Abstract: mb81c1501
Text: November 1990 Editbn 2.0 FUJITSU DATA SHEET MB81C1501 1 M B IT 3 PORT CMOS DYNAMIC FIELD MEMORY 1,175,040 Bit 3 Port CMOS Dynamic Field Memory The Fujitsu MB81C1501 is a 293, 760-word x 4 bit 960 pixels x 306 lines field memory. The MB81C1501 has a 3-port set-up (serial input: 1 port, serial output: 3 ports) allowing
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MB81C1501
MB81C1501
760-word
81C1501
38-LEAD
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T430
Abstract: SANYO DENKI P Sanyo Denki MAIN SWITCH BREAKER 10A1 T275
Text: different from the actual device. or outlet arranged POWER 0 0SS '• ■ ■ r .irrnn. llimirilll J;1»{¡^"í¡* NVERTER ' « M i w i M 'tavn * I! p^yp^iraypaaii^gpiiiMMiii NOHOW T h e t o t a lo u t p u tc u r r e n to ft h is d e v ic e is 10A ! C A
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10AlM?
19-inch
22lbs
T430
SANYO DENKI P
Sanyo Denki
MAIN SWITCH BREAKER
10A1
T275
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TQ-125
Abstract: MIL-M-55565 IR LFN ST9N lm38510
Text: 10 9 it # QUALIFICATION REQUIREMENTS REMOVED f * MIL-M-38510/400 USAF) 25 August 1977 M ILITARY SP EC IF IC A T IO N M ICROCIRCUITS, D IG IT A L , N-CHANNEL, SILICON-GATE MONOLITHIC 8 B IT MICROPROCESSOR ( F IX E D INSTRUCTION) INACTIVE FOR NEW DESIGN AFTER DATE OF T H IS REV ISIO N
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MIL-M-38510/400
MIL-M-38510,
TQ-125
MIL-M-55565
IR LFN
ST9N
lm38510
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NJU7014
Abstract: NJU7015 NJU7016 NJU701XD NJU701XM NJU701XR NJU701XV TD-111
Text: NJU7014/15/16 t ë H Œ Ü l f É T im i 7 ;u C - M O S * K 7 > ? s NJU7014/15/16IÍ. tëSŒS]tt2[ë]8&À Y 0 C - M O S K 7>7" -C-f „ i\*OJt«3ttt1pAt«<, r 5 > K « t ì f f i a * / J M l * £ » « - * • * C ¿ A < T '? ^ - r o Sfc, M f É « Œ l i 1 V m i n ¿ M Œ B » A < R r i i - e » t t l * t t « l [ «
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NJU7014/15/16
NJU7014/15/16IÃ
NJU701XD
NJU701XM
NJU701XV
NJU701XR
NJU7014
NJU7015
NJU7016
TD-111
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