TE1055
Abstract: TE1203 transistor DF 50
Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of
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30D206F150DH2
TE1160
TE1161
TE1162
TE1163
TE1164
TE1165
TE1166
TE1202
TE1055
TE1203
transistor DF 50
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TE1509
Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of
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TE1309
TE1400
TE1401
TE1402
TE1403
TE1404
TE1407
TE1408
TE1409
TE1410
TE1509
TE1055
30D8
DD 127 D TRANSISTOR
te1157.1
TE1064
TE1068
TE1090
TE1105
TYPE TE
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LM 3041
Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.
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2N326
5961-0021-s)
LM 3041
2N325
2N326
TRANSISTOR C 2026
c 2026 y transistor
MC 340 transistor
c 3076
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4207 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. U nit in mm + 0.2 2.8 -0 .3 Sm all Package (Dual Type) 1. 6 High Voltage and High current : V 0 eO = 5OV, I ç = 150mA (Max.)
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2SC4207
150mA
2SA1618
961001EAA2'
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2N2222AUE1
Abstract: 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331
Text: INCH-POUND MIL-PRF-19500/672 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/672
2N2222AUE1
MIL-PRF-19500.
OT-23
O-236)
2N2222AUE1
2N2222A JANTX
2N2222A JANTXV
sot-23 npn marking code cr
2N2222A
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
2N2222A 331
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19Sg
Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.
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MIL-S-19500/65B
19500/65A
2N388.
UIL-S-19500165B
514AD
19Sg
WN smd transistor
2N388
1027CB
2N388 JAN equivalent
smd transistor marking da
SMD TRANSISTOR MARKING km
transistor smd marking mx
SMD TRANSISTOR MARKING ME
2d SMD NPn TRANSISTOR
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2N501A
Abstract: ATI 1026 340nm RNW transistor
Text: &ffL-S-19500/62B 26 July 1968 WJPERSEDfNG MIL-%19500/63A 15 June 1961 M3f,fTARY SEMICONDUCTOR DEVICE, SPEIXFICATION TRANSISTOR, TYPE PNP, GERMANTUM, LOW-POWER 2N501A This specification i8 mandatory for use by all Departments gencfa of he Department of Defense.
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ffL-S-19500/62B
19500/63A
2N501A
2N501A
ATI 1026
340nm
RNW transistor
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2n7505
Abstract: IRF5Y9540CM
Text: INCH-POUND MIL-PRF-19500/748 3 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/748
2N7505T3,
MIL-PRF-19500.
O-257AA
2N7505T3
IRF5Y9540CM
2n7505
IRF5Y9540CM
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2n7508
Abstract: IRF5NJ6215 transistor smd marking 431
Text: INCH-POUND MIL-PRF-19500/751 27 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/751
2N7508U3,
MIL-PRF-19500.
O-276AA
2N7508U3
IRF5NJ6215
2n7508
IRF5NJ6215
transistor smd marking 431
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2n7507
Abstract: IRF5NJ3315 BL 15 SMD
Text: INCH-POUND MIL-PRF-19500/750 17 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/750
2N7507U3,
MIL-PRF-19500.
O-276AA
2N7507U3
IRF5NJ3315
2n7507
IRF5NJ3315
BL 15 SMD
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • Sm all Package • Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @ V q§
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SSM3J05FU
SC-70
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Untitled
Abstract: No abstract text available
Text: TO SH IBA SSM3J02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J02F POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 Sm all Package Low on Resistance : Ron = 0.5 Cl Max. (@VQg = —4 V)
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SSM3J02F
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transistor a719
Abstract: A719 4392 ic equivalent 2N3904
Text: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.
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MIL-S-19500/529
2N3904
MIL-S-19500/
MIL-S-19500.
MIL-S-19500
5961-A719)
transistor a719
A719
4392 ic equivalent
2N3904
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germanium transistor pnp
Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies
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WiOO/25A
2N240
uG-491A/U,
MIL-S-19500/25B
15SUE.
10UAL
germanium transistor pnp
GERMANIUM TRANSISTOR
2N240
S236
de-01 germanium transistor
boonton 91-6c
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ILS 404 CB
Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
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MIL-S-19500/120C
MIL-S-19500/120B
2N706
MIL-S-19500
ILS 404 CB
2n706 transistor
transistor array K1 marking
3001 8AT
transistor 2n706
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army sc-c-179495
Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De partments and Agencies o f the Department o f Defense.
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MIL-S-19500/44D
MIL-S-19500/44C
2N428
000-hour
MIL-S-19500,
MIL-S-19500
army sc-c-179495
2N426
2N428
germanium transistor ac 127
STT 433
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mwab
Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
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MIL-S-19500/120C
MIL-S-19500/120B
2N706
MJL-S-19900;
MIL-S-19500
mwab
2N706
transistor 2n706
2n706 transistor
mwab 3.3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01F HIGH SPEED SWITCHING APPLICATIONS U nit in mm • Sm all Package • Low on Resistance Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V) • Low Gate Threshold Voltage
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SSM3K01F
10nISV
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K 2056 transistor
Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
Text: MIL -£ -19500/4D 1 Ü November 1966 SUPERSEDING MIL-S-19500/4C 17 January 1962 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This specification is mandatory for use by all D epart ments and Agencies of the Department of Defense.
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-19500/4D
MIL-S-19500/4C
2N331
2N331.
K 2056 transistor
pnp germanium transistor
BUL 3810
2N331
Germanium Transistor
2N3317
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2N526
Abstract: FSC-5961 2n526 transistor FSC5961
Text: MIL -S - 19500/60E 19 March 1970 SUPERSEDING MIL-S-19500/60D 28 M arch 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N526 This specification is m andatory for use by all D epart m ents and Agencies of the D epartm ent of D efense.
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-19500/60E
MIL-S-19500/60D
2N526
aprM6jIH26
2N526
FSC-5961
2n526 transistor
FSC5961
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OC 74 germanium transistor
Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart m ents and Agencies of the Department of Defense.
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MIL-S-19500/125C
-S-19500/125B
2N1500
OC 74 germanium transistor
2N1500
pnp germanium transistor
NEW JERSEY SEMICONDUCTOR uz
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2802 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are
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PA2802
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PA2801
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2801 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are
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PA2801
PA2801
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SSM6K06FU
Abstract: No abstract text available
Text: TO SH IBA SSM6K06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K06FU HIGH SPEED SWITCHING APPLICATIONS U n it in mm 2.1 i 0.1 • Sm all Package • Low on Resistance : Ron = 160 m il M ax. @ V Q g = 4 V : Ron = 210 m i) M ax. (@ V G S = 2-5 V)
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SSM6K06FU
SSM6K06FU
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