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    2N326 Price and Stock

    Dynapar HS35R0012N326

    Encoder, Heavy Duty, Hollow Shaft, 18mm Bore, 12 PPR, 7 pin + mating Termination | Dynapar HS35R0012N326
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS HS35R0012N326 Bulk 2 Weeks 1
    • 1 $738.5
    • 10 $686.8
    • 100 $686.8
    • 1000 $686.8
    • 10000 $686.8
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    LP Technologies 2N3262

    Bipolar Junction Transistor, NPN Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3262 200
    • 1 $4.5
    • 10 $2.25
    • 100 $1.95
    • 1000 $1.95
    • 10000 $1.95
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    GTCAP 2N3262

    Bipolar Junction Transistor, NPN Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3262 96
    • 1 $4.5
    • 10 $4.5
    • 100 $2.775
    • 1000 $2.775
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    Semiconductor Technology Inc 2N3262

    Bipolar Junction Transistor, NPN Type, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3262 4
    • 1 $4.5
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
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    Molex 0192030495

    Terminals C-S-130-14 12-10 STEEL RING#14 STUD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 0192030495 Bulk 2,900 50
    • 1 -
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    • 100 $0.1
    • 1000 $0.098
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    2N326 Datasheets (179)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N326 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N326 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N326 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N326 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N326 Unknown GE Transistor Specifications Scan PDF
    2N326 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N326 Unknown Vintage Transistor Datasheets Scan PDF
    2N326 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3260 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3260 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3260 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3260 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3260 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3260 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3260 Pirgo Electronics Power Transistors in TO-63 Scan PDF
    2N3260 Solid Power POWER TRANSISTORS - TO-63 Scan PDF
    2N3260 Solid Power Power Transistors in TO-63 Package Scan PDF
    2N3261 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N3261 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N3261 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ...

    2N326 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


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    PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    Untitled

    Abstract: No abstract text available
    Text: 2N3266 Si NPN Power BJT 4.58 Transistors Transistors Bipolar Si NPN. 1 of 1 Home Part Number: 2N3266 Online Store 2N3266 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original
    PDF 2N3266 com/2n3266 2N3266 O-210AE

    LM 3041

    Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
    Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.


    Original
    PDF 2N326 5961-0021-s) LM 3041 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076

    Untitled

    Abstract: No abstract text available
    Text: 'j.ziiE.u ^>£mi-donauctoi iJ-^ioaucti, LJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3265 absolute maximum ratings at 25°C case temperature (unless otherwise noted) ^Collector-Emitter Voltage (VBE = -1.5 V, See Note 1)


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    PDF 2N3265

    Untitled

    Abstract: No abstract text available
    Text: 2N3266 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ã V(BR)CBO (V)120 I(C) Max. (A) Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N3266 Freq20M time500n

    Untitled

    Abstract: No abstract text available
    Text: 2N3265 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90ã V(BR)CBO (V)150 I(C) Max. (A) Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N3265 Freq20M time500n

    2N326

    Abstract: afr 05 NPN Germanium
    Text: MI L.s-19500/40 AMENDMENT 1 14 June 1988 I MILITARY SEMICONDUCTOR SPECIFICATION OEVICE, TRANSISTOR, PO’JER TYPE 2N326 NPN GERMANIuM, This amendment forms a part of MI L.s-19500/40B dated 26 February 1968, and is approved for use by all Departments and Agencies


    Original
    PDF s-19500/40 2N326 s-19500/40B 2N326 afr 05 NPN Germanium

    2FP TRANSISTOR

    Abstract: 2N3261 ATML H
    Text: <£tml- 2oncluatoi ZPioJLat*, Una. TELEPHONE: (973 378-2022 (212) 227-6006 FAX: (973) 3764060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA DIMENSIONAL OUTLINE JEOEC Ho.TO-52 2N3261 SILICON N-P-N HIGH-SPEED TRANSISTOR 1 h- :i?l "«• — i _,., , L .„


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    PDF 2N3261 2FP TRANSISTOR 2N3261 ATML H

    Untitled

    Abstract: No abstract text available
    Text: 2N3262 Si NPN Power HF BJT 5.21 Transistors Transistors Bipolar Si. 1 of 1 Home Part Number: 2N3262 Online Store 2N3262 Diodes Si NPN Po w er HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original
    PDF 2N3262 com/2n3262 2N3262

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


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    PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan
    PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


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    PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    2N3409

    Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
    Text: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB


    OCR Scan
    PDF DD0013S 2N3059 0X5-46 2N5187 2N706B/46 2N2894 0X5-18 2N3011 2N3261 2N4873 2N3409 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N3444 2N2501

    2N5330

    Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


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    PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330

    WJ200

    Abstract: 2N3262 WJ-200
    Text: 2N3262 File No. 56 T Y P IC A L S A T U R A T E D -S W IT C H IN G C H A R A C T E R IS T IC S A N D T E S T C IR C U IT C O M M O N -E M IT T E R CIRCUIT, B A SE INPUT. COLLECTO R M ILL IA M P E R E S Iç «IO O O ,O R 5 0 0 C IR C U IT U S E D T O M E A S U R E to n A N D toff F O R


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    PDF 2N3262 92CS-I2458 92CS-I2460 92CS-I246I Fig-12 WJ200 2N3262 WJ-200

    TRANSISTOR C875

    Abstract: C875 transistor 2N3262 RCA-2N3262 2n3262 rca
    Text: File No. 56 R F Pow er T ra n s is to rs Solid State Division 2N3262 For High-Voltage, RCA-2N3262 is a triple-diffused planar trans­ istor of the silicon n-p-n type intended for highvoltage, high-frequency pulse amplifiers and highv o l t a g e s a t u r a t e d s w i t c h e s in m i l i t a r y an d


    OCR Scan
    PDF 2N3262 RCA-2N3262 2N3262 2CS-I2742 TRANSISTOR C875 C875 transistor 2n3262 rca

    2n2019

    Abstract: 2n2018 2N545
    Text: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001


    OCR Scan
    PDF 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2n2019 2n2018

    Untitled

    Abstract: No abstract text available
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


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    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771

    2N3265

    Abstract: 2N5251 2N5250 2n3599 2N4865 2n4211 2N5250 JANTX t0114 2N6060 2n6278 to63
    Text: A POW ERHOUSE BIPOLAR NPN PLANAR POW ER T R A N S IS T O R S TO-63 T0-114 •c VOLTS AMPS hFE min/max < < o m PEAK bvceo o DEVICE TYPE > PACKAGE VCE seti max VOLTS 'C A A 2N3265 90 20.0 25- 55 15.0/2.0 1.0 2 0 .0 /2.0 2N3266 60 20.0 20- 80 15.0/3.0 1.6


    OCR Scan
    PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N4211 2N6060 2N5251 2N5250 2N4865 2N5250 JANTX t0114 2n6278 to63

    2N2823

    Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
    Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m •c < < o PEAK o O CO LU 1 O J > o m > DEVICE TYPE PACKAGE VCE sat max VOLTS ■c @ 'b A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÎA jl


    OCR Scan
    PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N6060 2N6215

    TO63 package

    Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3


    OCR Scan
    PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN

    2N5437

    Abstract: 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339
    Text: - "í . 00^3592 A P I A P I ELECTRONICS INC ~ ELECTRONICS INC 117= 26C 00236 2b .33-01 ¡>E^aOM3Sia [1000331. O . COIiLECTOR CURRENT = 2 5 AMPS NPN TŸPES D evice No C ase VCBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341


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    PDF 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N5437