ao4456
Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4456
AO4456/L
AO4456
AO4456L
-AO4456L
7716 mosfet
24V 20A SMPS
30V 20A smps
TYP31
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AOL1702
Abstract: SRFE
Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1702
AOL1702
SRFE
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AOD490
Abstract: SRFE transistor free B60100
Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOD490
AOD490
O-252
SRFE
transistor free
B60100
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AON6704L
Abstract: No abstract text available
Text: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AON6704L
AON6704L
CoAON6704L
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aol1412
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
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Untitled
Abstract: No abstract text available
Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4456
AO4456/L
AO4456
AO4456L
-AO4456L
00A/us
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AO4706
Abstract: 24v 5a smps dt1000
Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in
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AO4706
AO4706/L
AO4706
AO4706L
-AO4706L
24v 5a smps
dt1000
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Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
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Untitled
Abstract: No abstract text available
Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOD490
AOD490
O-252
000A/us
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AO4926
Abstract: No abstract text available
Text: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 FET2 VDS V = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ
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AO4926
AO4926
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Untitled
Abstract: No abstract text available
Text: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 VDS V = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two
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AO4926
AO4926L
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AOL1702
Abstract: No abstract text available
Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOL1702
AOL1702
AOL1702L
000A/us
0E-06
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AOD4110
Abstract: SRFE AOD490
Text: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
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AOD4110
AOD4110
O-252
SRFE
AOD490
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Untitled
Abstract: No abstract text available
Text: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and
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AO4716
AO4716
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Untitled
Abstract: No abstract text available
Text: AO4726 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in
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AO4726
AO4726
00A/us
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Untitled
Abstract: No abstract text available
Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor 1234566576 General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOD492
AOD492
859AB
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682 FET datasheet
Abstract: AOD492 T 4512 H diode diode T 4512 H
Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOD492
AOD492
O-252
682 FET datasheet
T 4512 H diode
diode T 4512 H
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Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
AOL1412L
00A/us
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Untitled
Abstract: No abstract text available
Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOL1412
AOL1412
00A/us
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AON7704
Abstract: No abstract text available
Text: AON7704 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON7704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7704
AON7704
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AON7702
Abstract: No abstract text available
Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7702
AON7702
VoltageON7702
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AON7702
Abstract: No abstract text available
Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON7702
AON7702
GON7702
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AOD4112
Abstract: No abstract text available
Text: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in
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AOD4112
AOD4112
O-252
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Untitled
Abstract: No abstract text available
Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in
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AO4706
AO4706/L
AO4706
AO4706L
-AO4706L
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