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    ALPHA 1000 FET Search Results

    ALPHA 1000 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-NLMAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLMAMB0001-0001 OSFP 400G Loopback Adapter Module for OSFP Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    SF-NLNAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLNAMB0001-0001 QSFP-DD 400G Loopback Adapter Module for QSFP-DD Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    10005639-11109LF Amphenol Communications Solutions Vertical Through-Hole 240 Position DDR2 DIMM Connector, 1.00mm pitch Visit Amphenol Communications Solutions
    10008026-201 Amphenol Communications Solutions GIG-Array®, Mezzanine Connectors, 13mm Plug 296 Position. Visit Amphenol Communications Solutions
    10005639-12328HLF Amphenol Communications Solutions DDR2 DIMM, Storage and Server Connector, Vertical, Through Hole, 240 Position, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions

    ALPHA 1000 FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ao4456

    Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31 PDF

    AOL1702

    Abstract: SRFE
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AOL1702 AOL1702 SRFE PDF

    AOD490

    Abstract: SRFE transistor free B60100
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AOD490 AOD490 O-252 SRFE transistor free B60100 PDF

    AON6704L

    Abstract: No abstract text available
    Text: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AON6704L AON6704L CoAON6704L PDF

    aol1412

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AOL1412 AOL1412 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us PDF

    AO4706

    Abstract: 24v 5a smps dt1000
    Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


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    AO4706 AO4706/L AO4706 AO4706L -AO4706L 24v 5a smps dt1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AOL1412 AOL1412 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AOD490 AOD490 O-252 000A/us PDF

    AO4926

    Abstract: No abstract text available
    Text: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 FET2 VDS V = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ


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    AO4926 AO4926 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 VDS V = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two


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    AO4926 AO4926L PDF

    AOL1702

    Abstract: No abstract text available
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AOL1702 AOL1702 AOL1702L 000A/us 0E-06 PDF

    AOD4110

    Abstract: SRFE AOD490
    Text: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


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    AOD4110 AOD4110 O-252 SRFE AOD490 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and


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    AO4716 AO4716 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4726 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in


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    AO4726 AO4726 00A/us PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor 1234566576 General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AOD492 AOD492 859AB PDF

    682 FET datasheet

    Abstract: AOD492 T 4512 H diode diode T 4512 H
    Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AOD492 AOD492 O-252 682 FET datasheet T 4512 H diode diode T 4512 H PDF

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AOL1412 AOL1412 AOL1412L 00A/us PDF

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AOL1412 AOL1412 00A/us PDF

    AON7704

    Abstract: No abstract text available
    Text: AON7704 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON7704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AON7704 AON7704 PDF

    AON7702

    Abstract: No abstract text available
    Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AON7702 AON7702 VoltageON7702 PDF

    AON7702

    Abstract: No abstract text available
    Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


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    AON7702 AON7702 GON7702 PDF

    AOD4112

    Abstract: No abstract text available
    Text: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


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    AOD4112 AOD4112 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


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    AO4706 AO4706/L AO4706 AO4706L -AO4706L PDF