63B16
Abstract: 57B5 3B28 b026 ST7580 energymeter STEVAL-IPP001V2 B576 7B287 Q567
Text: STEVAL-IPP001V2 Complete solution for power line communication in metering applications Data brief Features • Energy consumption measured by external metering board ■ Power line communication up to 28.8 kbps ■ LCD display to show electrical parameters of
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STEVAL-IPP001V2
RS232/IrDA
STEVAL-IPP001V2
STM32F10xxx
ST7580
63B16
57B5
3B28
b026
energymeter
B576
7B287
Q567
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EVAL-12-34813 EnerChip RTC
Abstract: EnerChip DS-72-39 technology CBC34813-M5C enerchip cc
Text: Preliminary CBC-EVAL-12-34813 EnerChip RTC Evaluation Kit CBC34813 Real-Time Clock with Integrated Backup Power System Features and Overview CBC-EVAL-12-34813 is a demonstration kit featuring the Cymbet CBC34813 EnerChip RTC - an integrated surface mount device combining an Ambiq Micro
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CBC-EVAL-12-34813
CBC34813
CBC-EVAL-12-34813
AM0813
DS-72-39
EVAL-12-34813 EnerChip RTC
EnerChip
technology
CBC34813-M5C
enerchip cc
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Untitled
Abstract: No abstract text available
Text: STH245N75F3-6 Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET III Power MOSFET in a H²PAK-6 package Datasheet - production data Features Order code VDS RDS on max. ID STH245N75F3-6 75 V 3.0 Ω 180 A TAB • Designed for automotive applications and
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STH245N75F3-6
AEC-Q101
DocID026268
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Untitled
Abstract: No abstract text available
Text: AB08XX Series Real Time Clock Module Date of Issue: Sept. 10th, 2012 3.0 x 3.0 mm Page 1 of (12) Abracon Drawing # ESD Sensitive Revision #: Initial Release AB08XX Features • Sub-threshold Power Optimized Technology by Ambiq Micro Ultra-low supply current:
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AB08XX
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10NM50N
Abstract: STP10NM50 am08150 STF10NM50N
Text: STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh II Power MOSFET Features VDSS @Tjmax Type TAB RDS(on) max ID 3 1 STD10NM50N STF10NM50N 550 V < 0.63 Ω 3 1 DPAK 7A 2 TO-220FP TAB STP10NM50N • 100% avalanche tested
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STD10NM50N
STF10NM50N,
STP10NM50N
O-220FP,
O-220
STF10NM50N
O-220FP
O-220
10NM50N
STP10NM50
am08150
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AM0805
Abstract: AB0805 AM0803 AM0813 AB080X AB0814 Acal Technology AB
Text: AB08XX Series Real Time Clock Module Date of Issue: Sept. 10th, 2012 3.0 x 3.0 mm Page 1 of (12) Abracon Drawing # ESD Sensitive Revision #: Initial Release AB08XX Features • Sub-threshold Power Optimized Technology by Ambiq Micro Ultra-low supply current:
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AB08XX
AM0805
AB0805
AM0803
AM0813
AB080X
AB0814
Acal Technology AB
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DS-72-34
Abstract: enerchip-real-time-clocks CBC34803-M5C integrated circuit scl 1058
Text: Preliminary CBC34803 EnerChip RTC I2C Real-Time Clock/Calendar with Integrated Backup Power Features • Ultra low power Real Time Clock with Integrated rechargeable EnerChip™ solid state battery, power-fail detect and automatic switchover, providing greater than 5 days typical of RTC
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CBC34803
DS-72-34
enerchip-real-time-clocks
CBC34803-M5C
integrated circuit scl 1058
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Untitled
Abstract: No abstract text available
Text: Preliminary CBC34803 EnerChip RTC I2C Real-Time Clock/Calendar with Integrated Backup Power Features • Ultra low power Real Time Clock with Integrated rechargeable EnerChip™ solid state battery, power-fail detect and automatic switchover, providing greater than 6 days of RTC backup
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CBC34803
DS-72-34
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9NM60
Abstract: 9NM60N
Text: STF9NM60N 045Y N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh II Power MOSFET in a TO-220FP narrow leads package Datasheet − preliminary data Features Order code VDS RDS(on) max STF9NM60N(045Y) 650 V 0.745 Ω ID PTOT 6.5 A 25 W • 100% avalanche tested
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STF9NM60N
O-220FP
O-220FP
DocID024553
9NM60
9NM60N
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STF8N65M5
Abstract: STP8N65M5 8N65 STB8N65M5 STD8N65M5
Text: STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω typ., 7 A MDmesh V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages Datasheet − production data Features TAB TAB Type VDSS @ TJmax STB8N65M5
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STB8N65M5,
STD8N65M5,
STF8N65M5
STI8N65M5,
STP8N65M5,
STU8N65M5
O-220,
O-220FP,
STB8N65M5
STD8N65M5
STP8N65M5
8N65
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8n65
Abstract: No abstract text available
Text: STB8N65M5, STD8N65M5, STF8N65M5, STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω typ., 7 A MDmesh V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages Datasheet — production data Features TAB TAB Type VDSS @ TJmax STB8N65M5
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STB8N65M5,
STD8N65M5,
STF8N65M5,
STI8N65M5,
STP8N65M5,
STU8N65M5
O-220,
O-220FP,
STB8N65M5
STD8N65M5
8n65
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Untitled
Abstract: No abstract text available
Text: Preliminary CBC34813 EnerChip RTC SPI Real-Time Clock/Calendar with Integrated Backup Power Features • Ultra low power Real Time Clock with Integrated rechargeable EnerChip™ solid state battery, power-fail detect and automatic switchover, providing greater than 5 days typical of RTC
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CBC34813
DS-72-38
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integrated circuit scl 1058
Abstract: No abstract text available
Text: Preliminary CBC34803 EnerChip RTC I2C Real-Time Clock/Calendar with Integrated Backup Power Features • Ultra low power Real Time Clock with Integrated rechargeable EnerChip™ solid state battery, power-fail detect and automatic switchover, providing greater than 5 days typical of RTC
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CBC34803
DS-72-34
integrated circuit scl 1058
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STD10NM50N
Abstract: STP10NM50N STP10NM50 STF10NM50N
Text: STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS @Tjmax Type RDS(on) max ID 3 3 STD10NM50N STF10NM50N 1 550 V < 0.63 Ω 2 1 TO-220 TO-220FP 7A 2 STP10NM50N • 100% avalanche tested
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STD10NM50N
STF10NM50N,
STP10NM50N
O-220,
O-220FP,
STF10NM50N
O-220
O-220FP
STD10NM50N
STP10NM50N
STP10NM50
STF10NM50N
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STH240N75F3-2
Abstract: 240N75F3
Text: STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 mΩ typ., 180 A STripFET III Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet − production data Features Order code VDSS RDS on max. ID 75 V < 3.0 mΩ 180 A STH240N75F3-2 STH240N75F3-6 TAB 7
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STH240N75F3-2,
STH240N75F3-6
STH240N75F3-2
240N75F3
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STH240N75F3-6
Abstract: No abstract text available
Text: STH240N75F3-6 N-channel 75 V, 2.6 mΩ, 180 A, H²PAK STripFET III Power MOSFET Features Order code VDSS RDS on max. ID STH240N75F3-6 75 V < 3.0 mΩ 180 A • Conduction losses reduced ■ Low profile, very low parasitic inductance 7 1 Applications ■
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STH240N75F3-6
240N75F3
1/14in
STH240N75F3-6
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STL100N1VH5
Abstract: stl100n1
Text: STL100N1VH5 N-channel 12 V, 0.0022 Ω, 25 A PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max. ID STL100N1VH5 12 V <0.003 Ω 25 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL100N1VH5
STL100N1VH5
stl100n1
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8N65
Abstract: stf8n65 STP8N65M
Text: STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω, 7 A MDmesh V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5
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STB8N65M5,
STD8N65M5,
STF8N65M5
STI8N65M5,
STP8N65M5,
STU8N65M5
O-220,
O-220FP,
STB8N65M5
STD8N65M5
8N65
stf8n65
STP8N65M
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9NM60N
Abstract: 9NM60 STF9NM60 STF9NM60N STD9NM60N STP9NM60N std9n
Text: STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features Order codes VDSS @Tjmax RDS(on) max. ID 3 3 STD9NM60N STF9NM60N 1 650 V < 0.745 Ω 2 1 TO-220 TO-220FP 6.5 A 2 STP9NM60N • 100% avalanche tested
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STD9NM60N
STF9NM60N,
STP9NM60N
O-220,
O-220FP,
STF9NM60N
O-220
O-220FP
9NM60N
9NM60
STF9NM60
STF9NM60N
STD9NM60N
STP9NM60N
std9n
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Untitled
Abstract: No abstract text available
Text: Engineering Ultra Low Power System on Chip Sensors Steve Grady – Cymbet Scott Hanson – Ambiq Micro Jim Magos – Cardinal Components Key Trends Driving Micro SoC Sensors Ultra Low Power Processors Smart Devices and Sensors Everywhere Wireless is pervasive
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CBC34813
AM0813
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Untitled
Abstract: No abstract text available
Text: a Preliminary Advanced Micro Devices A m 1 7 3 6 /A m 1 7 6 5 Serial Configuration PROM DISTINCTIVE CHARACTERISTICS • One-time programmable 36,288 or 65,536 x 1 -bit serial memories designed to store configuration patterns for Logic Cell Arrays. ■ Simple interface to the AMD LCA™ requires
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Am1736
Am2000
Am3000
Am3042.
TheAm1765
Am3000
0867-013A
Am1736/Am1765
0867-008A
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am2064
Abstract: am2018 ami 1736 amd 8pin dip AM1736 Configuration PROMs
Text: Cl Preliminary Advanced Micro Devices Am1736/Am1765 Serial Configuration PROM DISTINCTIVE CHARACTERISTICS • One-time programmable 36,288 or 65,536 x 1-bit serial memories designed to store configuration patterns for Logic Cell Arrays. ■ Simple interface to the AMD LCA™ requires
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736/Am1765
Am1736
Am2000
Am3000
Am3042.
Am1765
configuratAm3090
Am081
am2064
am2018
ami 1736
amd 8pin dip
Configuration PROMs
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AM2018
Abstract: 1736 PROM
Text: Preliminary Am1736/Am1765 Advanced Micro Devices Serial Configuration PROM DISTINCTIVE CHARACTERISTICS • One-time programmable 36,288 or 65,536 x 1-blt serial memories designed to store configuration patterns for Logic Cell Arrays. ■ Simple Interface to the AMD LCA™ requires
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Am1736/Am1765
Aml736
Am2000
Am3000
Am3042.
Aml765
Am3040,
Am3064
AM2018
1736 PROM
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am2064
Abstract: No abstract text available
Text: n Preliminary Advanced Micro Devices Am1736/Am1765 Serial Configuration PROM DISTINCTIVE CHARACTERISTICS • One-time programmable 36,288 or 65,536 x l-bit serial memories designed to store configuration patterns for Logic Cell Arrays. ■ Simple interface to the AMD LCA™ requires
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736/Am
Am1736
Am2000
Am3000
Am3042.
Am081
AmPGA021
24-bit
am2064
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