Meter-Bus
Abstract: EN137574
Text: DS0010 - AM090 Wireless Meter-Bus 868MHz Narrowband Modem Advance Information Datasheet DS0010 AM090 Wireless Meter-Bus 868MHz Narrowband Modem Advance Information Production Status – Production Important Information – The information contained in this document is subject to
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DS0010
AM090
868MHz
DS0010
MKW01Z128:
EN13757-4
Meter-Bus
EN137574
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stp26nm60
Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Text: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V
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STB26NM60N,
STF26NM60N,
STI26NM60N
STP26NM60N,
STW26NM60N
O-220,
O-220FP
O-247
STB26NM60N
STF26NM60N
stp26nm60
STW26NM60N
26NM60N
STP26NM60N
26nm60
STB26NM60
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32NM50N
Abstract: AM-1309
Text: STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 Ω typ., 22 A MDmesh II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages Datasheet — production data Features TAB Order codes VDS RDS on max. PTOT ID 2 3 1 STB32NM50N STF32NM50N
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STB32NM50N,
STF32NM50N,
STP32NM50N,
STW32NM50N
O-220FP,
O-220,
O-247
STB32NM50N
STF32NM50N
STP32NM50N
32NM50N
AM-1309
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Untitled
Abstract: No abstract text available
Text: STH260N6F6-6 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-6 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH260N6F6-6 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance
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STH260N6F6-6
260N6F6
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stp18nm60n
Abstract: stw18nm60n STF18NM60N 18NM60N 18nm60 STB18NM60N
Text: STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB Order codes VDSS @Tjmax RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N
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STB18NM60N,
STF18NM60N,
STP18NM60N,
STW18NM60N
O-220FP,
O-220
O-247
STB18NM60N
STF18NM60N
STP18NM60N
stw18nm60n
18NM60N
18nm60
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Untitled
Abstract: No abstract text available
Text: STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFETs with fast diode in D2PAK and TO-247 packages Datasheet - production data Features Order codes STB36NM60ND TAB STW36NM60ND 3 1 2 3 1 D2PAK TO-247 VDSS @TJ
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STB36NM60ND,
STW36NM60ND
O-247
STB36NM60ND
O-247
AEC-Q101
DocID023785
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Untitled
Abstract: No abstract text available
Text: STF34NM60N N-channel 600 V, 0.092 Ω typ., 31.5 A MDmesh II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDSS RDS on ID PTOT STF34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge
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STF34NM60N
O-220FP
STF34NM60N
O-220FP
DocID024967
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Untitled
Abstract: No abstract text available
Text: STFI34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh II Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code VDSS RDS on ID PTOT STFI34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge
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STFI34NM60N
STFI34NM60N
DocID022439
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Untitled
Abstract: No abstract text available
Text: STW48NM60N N-channel 600 V, 0.055 Ω, 39 A TO-247 MDmesh II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STW48NM60N 650 V < 0.07 Ω 39 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance
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STW48NM60N
O-247
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34NM60N
Abstract: STF34NM60N STP34NM60N STW34NM60N
Text: STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω, 29 A MDmesh II Power MOSFET TO-220, TO-247, TO-220FP Features Type STF34NM60N STP34NM60N STW34NM60N VDSS RDS on max. ID PTOT 600 V 600 V 600 V 0.105 Ω 0.105 Ω 0.105 Ω 29 A 29 A 29 A 40 W 210 W
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STF34NM60N
STP34NM60N,
STW34NM60N
O-220,
O-247,
O-220FP
STP34NM60N
O-247
34NM60N
STF34NM60N
STP34NM60N
STW34NM60N
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STN3N40K3
Abstract: 3n40k stn3n40k 29-Jun-2010 P008
Text: STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS on max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance
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STN3N40K3
OT-223
OT-223
STN3N40K3
3n40k
stn3n40k
29-Jun-2010
P008
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Untitled
Abstract: No abstract text available
Text: STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDS RDS on max ID STW26NM60N 600 V 0.165 Ω 20 A • 100% avalanche tested • Low input capacitance and gate charge
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STW26NM60N
O-247
O-247
DocID025246
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100NM60N
Abstract: STY100NM60N
Text: STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Type VDSS @ TJmax RDS on max ID STY100NM60N 650 V < 0.029 Ω 98 A • 100% avalanche tested ■ Low input capacitance and gate charge
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STY100NM60N
Max247
Max247
100NM60N
STY100NM60N
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STD13NM60N
Abstract: STB13NM60N 13NM60 13nm60n 13nm6
Text: STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features Order codes VDSS @Tjmax RDS(on) max ID STB13NM60N 650 V < 0.36 Ω 11 A STD13NM60N 650 V < 0.36 Ω 11 A
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STB13NM60N,
STD13NM60N
STB13NM60N
STD13NM60N
13NM60
13nm60n
13nm6
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STP260N6F6
Abstract: No abstract text available
Text: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A TO-220, I²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STP260N6F6 STI260N6F6 60 V < 0.003 Ω 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
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STI260N6F6
STP260N6F6
O-220,
STP260N6F6
STI260N6F6
O-220
260N6F6
O-220
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34NM60N
Abstract: 34NM60
Text: STFI34NM60N N-channel 600 V, 0.092 Ω, 29 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features VDS RDS on max. ID PTOT 600 V 0.105 Ω 29 A 40 W Order code STFI34NM60N • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
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STFI34NM60N
34NM60N
34NM60
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Untitled
Abstract: No abstract text available
Text: STB36NM60N N-channel 600 V, 0.092 Ω, 29 A, MDmesh II Power MOSFET in D²PAK Features Order code VDSS @ TJmax RDS on max ID PW STB36NM60N 650 V < 0.105 Ω 29 A 210 W • 100% avalanche tested 3 ■ Low input capacitance and gate charge ■ Low gate input resistance
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STB36NM60N
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Untitled
Abstract: No abstract text available
Text: STL35N15F3 N-channel 150 V, 0.04 Ω, 7 A, PowerFLAT 5x6 STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID STL35N15F3 150 V < 0.0355 Ω 7 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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STL35N15F3
STL35N15F3
L35N15F3
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stl35n15f3
Abstract: No abstract text available
Text: STL35N15F3 N-channel 150 V, 0.0355 Ω, 7 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N15F3 150 V < 0.04 Ω 7 A (1) 1. The value is rated according Rthj-pcb 1 2 • Improved die-to-footprint ratio
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STL35N15F3
STL35N15F3
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stp210n75
Abstract: STP210N75F6 210N75F6
Text: STP210N75F6 N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STP210N75F6 75 V < 3.7 mΩ 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness 3 1 2 TO-220 Application
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STP210N75F6
O-220
O-220
210N75F6
stp210n75
STP210N75F6
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48NM60N
Abstract: stw48nm60 STW48NM60N 48nm60
Text: STW48NM60N N-channel 600 V, 0.055 Ω, 39 A TO-247 MDmesh II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STW48NM60N 650 V < 0.07 Ω 39 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance
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STW48NM60N
O-247
O-247
48NM60N
stw48nm60
STW48NM60N
48nm60
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Untitled
Abstract: No abstract text available
Text: STW48NM60N N-channel 600 V, 0.055 Ω typ., 44 A MDmesh II Power MOSFET in a TO-247 package Datasheet — production data Features Order codes VDSS @ TJmax RDS on max ID STW48NM60N 650 V < 0.07 Ω 44 A • 100% avalanche tested ■ Low input capacitance and gate charge
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STW48NM60N
O-247
O-247
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19NM60N
Abstract: No abstract text available
Text: STW19NM60N Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features 2 Order code VDS @Tjmax RDS(on) max. STW19NM60N 650 V 0.285 Ω PTOT ID 13 A 110 W • Designed for automotive applications and
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STW19NM60N
O-247
AEC-Q101
O-247
DocID024392
19NM60N
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Untitled
Abstract: No abstract text available
Text: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A TO-220, I²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STP260N6F6 STI260N6F6 60 V < 0.003 Ω 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
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STI260N6F6
STP260N6F6
O-220,
O-220
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