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    AMD AM28F010-120JC

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    AMD AM28F010-95JC

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    AMD AM28F010-120FC

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    AMD AM28F010-150

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    AM28F01 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Am28F010 Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AM28F010-120/BUA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120/BXA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3/BUA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3/BXA Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DC Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DCB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DE Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DEB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DI Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3DIB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3JC Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3JI Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LC Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LCB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LE Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LEB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LI Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    AM28F010-120C3LIB Advanced Micro Devices 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory Original PDF
    ...

    AM28F01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JC EC

    Abstract: am28f010 die AM28F010 0/am28f010 die am28f010-200 rev i
    Text: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F010 32-Pin JC EC am28f010 die 0/am28f010 die am28f010-200 rev i PDF

    AM28F010

    Abstract: am28f010-200
    Text: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F010 32-Pin am28f010-200 PDF

    hot electron devices

    Abstract: AM28F010 am28f010-200 rev i
    Text: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chip-Erase ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — One second typical chip-erase


    Original     		Am28F010 32-Pin c-250 hot electron devices am28f010-200 rev i PDF

    AM28F010A

    Abstract: TSR032-32-Pin
    Text: FINAL Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F010A 32-pin TSR032-32-Pin PDF

    sample code read and write flash memory

    Abstract: AM28F010A
    Text: FINAL Am28F010A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time


    Original     		Am28F010A 32-Pin 00H/FFH. sample code read and write flash memory PDF

    AM28F010

    Abstract: No abstract text available
    Text: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    Original     		Am28F010 32-Pin PDF

    AM28F020

    Abstract: No abstract text available
    Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F020 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: El Ad va n ce I n f o r m a t i o n Am28F010 Advanced Micro Devices 131,072 x 8-Bit C M O S Flash E 2PROM DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chlp-Erase ■ — One Second Typical Chip-Erase ■ Compatible with JEDEC Standard Byte


    OCR Scan     		Am28F010 32-pln 32-pin 120ns 120ns. 28F010 PDF

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


    OCR Scan     		G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance


    OCR Scan     		Am28F010A 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including


    OCR Scan     		Am28F010A 32-pin 16-038-TSOP-2 TSR032â TSR032 PDF

    EE-21

    Abstract: 28F010P
    Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current


    OCR Scan     		Am28F010 32-Pin D55752fl D3273D EE-21 28F010P PDF

    Am26F010

    Abstract: am26f AM28F010
    Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption


    OCR Scan     		Am28F010 32-Pin 0257S2Ã D033TÃ Am26F010 am26f PDF

    Untitled

    Abstract: No abstract text available
    Text: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AM D Ü Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■


    OCR Scan     		Am28F010A 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: AMENDMENT AMD£I Am28F01 OA Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 28 F 010A device in the 1996 Flash P roducts Data B ook/H andbook, PID 11796D. This docum ent includes re p la ce m e n t p a g e s fo r the A m 2 8 F 0 1 0 A d a ta sheet,


    OCR Scan     		Am28F01 11796D. 16778C. Am28F010A IN3064 16778C 16778C-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMDJ1 Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance


    OCR Scan     		Am28F010A 32-pin 28F010A PDF

    data programmers DIP PLCC

    Abstract: AMD 478 socket pinout
    Text: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V


    OCR Scan     		Am28F010 -32-P 32-Pin 02S752fl data programmers DIP PLCC AMD 478 socket pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: F IN A L A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High performance — Access tim es as fast as 70 ns


    OCR Scan     		Am28F010A 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: a Preliminary Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption - 30 mA maximum active current - 1 0 0 nA maximum standby current ■


    OCR Scan     		Am28F010 32-Pin 8007-003A Am28F010-95C4JC Am28F010-95C3JC PDF

    Untitled

    Abstract: No abstract text available
    Text: FI NA! AMDB Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		Am28F010 32-pin 257S2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — One second typical chip-erase — 70 ns maximum access time ■ CMOS Low power consumption Flashrite Programming


    OCR Scan     		Am28F010 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current


    OCR Scan     		32-Pin 28F010 PDF