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    AM352 Search Results

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    AM352 Price and Stock

    Vishay Semiconductors P6SMB200A-M3-52

    TVS DIODE 171VWM 274VC DO214AA
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    DigiKey P6SMB200A-M3-52 Cut Tape 7,500 1
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    P6SMB200A-M3-52 Ammo Pack 7,500 750
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    • 1000 $0.15
    • 10000 $0.1421
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    Vishay Semiconductors SMBJ30A-M3-52

    TVS DIODE 30VWM 48.4VC DO214AA
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    DigiKey SMBJ30A-M3-52 Cut Tape 7,180 1
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    SMBJ30A-M3-52 Digi-Reel 7,180 1
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    SMBJ30A-M3-52 Reel 6,750 750
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    • 1000 $0.18787
    • 10000 $0.14186
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    Vishay Semiconductors SMBJ36A-M3-52

    TVS DIODE 36VWM 58.1VC DO214AA
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    DigiKey SMBJ36A-M3-52 Cut Tape 6,832 1
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    SMBJ36A-M3-52 Digi-Reel 6,832 1
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    SMBJ36A-M3-52 Reel 6,750 750
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    • 1000 $0.18787
    • 10000 $0.14186
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    Vishay Semiconductors SMBJ15CA-M3-52

    TVS DIODE 15VWM 24.4VC DO214AA
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    DigiKey SMBJ15CA-M3-52 Cut Tape 5,900 1
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    SMBJ15CA-M3-52 Digi-Reel 5,900 1
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    SMBJ15CA-M3-52 Reel 5,250 750
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    • 10000 $0.18511
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    Vishay Semiconductors P6SMB440A-M3-52

    TVS DIODE 376VWM 602VC DO214AA
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    DigiKey P6SMB440A-M3-52 Cut Tape 5,118 1
    • 1 $0.59
    • 10 $0.485
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    P6SMB440A-M3-52 Ammo Pack 4,500 750
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    • 1000 $0.29924
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    AM352 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AM-352 M/A-COM Amplifiers / Log Amplifiers Scan PDF
    AM3525GC Advanced Micro Devices Mask Programmable Gate Array with ECL RAM Scan PDF
    AM3525GCB Advanced Micro Devices IC CPLD 3718GATE 0.6NS 5V Scan PDF

    AM352 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AM3520C Analog Power N & P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and


    Original
    PDF AM3520C 130oC/W DS-AM3520

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM3524C N & P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and


    Original
    PDF AM3524C DS-AM3524

    Untitled

    Abstract: No abstract text available
    Text: SMB214A/B/C Preliminary Information High-power, Three-channel Programmable DC-DC System Power Managers FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory • Output voltage set point


    Original
    PDF SMB214A/B/C

    AM351

    Abstract: AM352 am-35-4
    Text: AM351 THRU AM356 Shanghai Lunsure Electronic Technology Co.,LTD Tel:0086-21-37185008 Fax:0086-21-57152769 PRESS FIT AUTOMOTIVE RECTIFIER MOTOROLA Features Low leakage Low forward voltage drop High current capability High forward surge current capability VOLTAGE RANGE


    Original
    PDF AM351 AM356 35AMPS MIL-STD-202E AM352 AM353 AM354 AM351 AM352 am-35-4

    sot-89 marking d9

    Abstract: marking diode SCHOTTKY SOD123 SMD QFN-32 Zener diode smd marking code C24 GRM1885C1H470JA01D SSOT6 FDS6675BZ sot 23 marking code c29 FDC6420C equivalent
    Text: SMB113A/B/SMB117/A Preliminary Information High-power, Four-channel Programmable DC-DC System Power Managers FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory • Output voltage set point


    Original
    PDF SMB113A/B/SMB117/A sot-89 marking d9 marking diode SCHOTTKY SOD123 SMD QFN-32 Zener diode smd marking code C24 GRM1885C1H470JA01D SSOT6 FDS6675BZ sot 23 marking code c29 FDC6420C equivalent

    FDS6675BZ

    Abstract: FDC6420C equivalent AM3520 ssot-6 SMB113ANC-650L smd marking codes c9 zetex sot-89 marking d9 Zener diode smd marking code C24 FDS6680As GRM188R71H332KA01D
    Text: SMB113A/B/SMB117/A Preliminary Information High-power, Four-channel Programmable DC-DC System Power Managers FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory • Output voltage set point


    Original
    PDF SMB113A/B/SMB117/A FDS6675BZ FDC6420C equivalent AM3520 ssot-6 SMB113ANC-650L smd marking codes c9 zetex sot-89 marking d9 Zener diode smd marking code C24 FDS6680As GRM188R71H332KA01D

    AM2019

    Abstract: 2-bit half adder layout AX253 AX201 AM2001 AX261
    Text: * Am3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS • • • Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns


    OCR Scan
    PDF Am3525 TC002800 7321A 7322A AM2019 2-bit half adder layout AX253 AX201 AM2001 AX261

    Anzac amc

    Abstract: anzac amc-180 AMC-351 Anzac anzac am Anzac amc 182 AMC-182
    Text: n / A - C O N INC/ ANZAC »IV 5L.MP177 GQD3t.Gb fl7L> S1E D ANZ T'-74-Q°l-01 fyrj-pvzt ANZAC RF & CELLULAR COMPONENTS Amplifiers continued A m p lif ie r s MODEL NO. FREQUENCY RANGE (MHz) GAIN (dB) TYP NOISE FIGURE (dB) TYP 3RD ORDER INTERCEPT (dB) TYP


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    PDF MP177 -74-Q FP-12 Anzac amc anzac amc-180 AMC-351 Anzac anzac am Anzac amc 182 AMC-182

    AMC1735

    Abstract: Anzac amc AMC-179 Anzac amc 182 AMC-351 Anzac AMC-173 AM-178 AMC-154 amc-175 AM-173
    Text: n/A-COn IN C / A NZ A C DI V SIE SL.M2177 0003t.0b ñ7t> D ANZ T'-7q-oO .oi A fa r ANZAC RF& CELLULAR COMPONENTS Am plifiers (continued A m p lif ie r s MODEL NO. FREQUENCY RANGE (MHz) GAIN (dB) TYP NOISE FIGURE (dB) TYP 3RD ORDER INTERCEPT (dB) TYP 1dB COMP.


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    PDF M2177 00D3bGt, AM-216 AM-217 AM-211 AMC-211 AMS-211 AM-176 AMC-176 AM-173 AMC1735 Anzac amc AMC-179 Anzac amc 182 AMC-351 Anzac AMC-173 AM-178 AMC-154 amc-175

    am2022

    Abstract: am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290
    Text: Am 3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns High-performance, low-power ECL gates


    OCR Scan
    PDF Am3525 Am3525 TC002800 WF010980 7321A D7322A am2022 am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290

    HJD 228

    Abstract: D2575 AM29434 BD005 t14x3 dSMC WF-023 ecl pal 16 macrocells Advanced Micro Devices comparators P2102
    Text: ADVANCED MICRO D E V I C E S d F | o 5 S 7 5 HS DOEMTBS 7 0257525 ADVANCED MICRO DEVICES 89D 24935 D f-LfS’Ol a Am 29423 10K-ECL 32-Bit Parallel Multiplier ADVANCE INFORMATION > 3 DISTINCTIVE CHARACTERISTICS 32-Blt Three-Bus Architecture - The device has tw o 32-bit Input ports and one 32-btt


    OCR Scan
    PDF OHS75HS Am29423 10K-ECL 32-Bit 32-Blt T-45-07 HJD 228 D2575 AM29434 BD005 t14x3 dSMC WF-023 ecl pal 16 macrocells Advanced Micro Devices comparators P2102

    AM3526

    Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
    Text: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s


    OCR Scan
    PDF 1T-42-11-13 WF001164 00ECH7Ã T-42-11-13 AM3526 2-bit half adder AM312 AM290 AM2019 AM2001 002074

    la 4507

    Abstract: P06P03 43BJ ST1302 g3328 Am29434
    Text: ADVANCED MICRO 0257525 DEVICES M d F | D5S7SHS ADVANCED MI CRO D E V I C E S 8 9 D OOEM^S 7 D p .lfS ’01 24935 Am29423 a 10K-ECL 32-Bit Parallel Multiplier ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS 32-Blt Three-Bus Architecture Registers can be made transparent


    OCR Scan
    PDF Am29423 10K-ECL 32-Bit 32-Blt 32-btt IC000931 T-45-07 la 4507 P06P03 43BJ ST1302 g3328 Am29434