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    Logical Systems PA28SS-OT-6

    ADAPTER 28-SSOP TO 28-DIP
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    DigiKey PA28SS-OT-6 Bulk 1 1
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    Logical Systems PA20SS-OT-6

    ADAPTER 20-SSOP TO 20-DIP
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    DigiKey PA20SS-OT-6 Bulk 1
    • 1 $68
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    Nexperia PSMN020-100YS,115

    MOSFETs SOT669 100V 43A N-CH MOSFET
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    TTI PSMN020-100YS,115 Reel 36,000 1,500
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    Nexperia PSMN5R5-60YS,115

    MOSFETs SOT669 N CHAN 60V
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    TTI PSMN5R5-60YS,115 Reel 9,000 1,500
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    Nexperia PSMN069-100YS,115

    MOSFETs SOT66 9 NCHA N90V
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    TTI PSMN069-100YS,115 Reel 6,000 1,500
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    SSOT6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Common rail piezo injector driver

    Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


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    PDF

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    Abstract: No abstract text available
    Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate


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    FDC6327C PDF

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    Abstract: No abstract text available
    Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W


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    FDC5612 PDF

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


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    FDC602P SSOT-6 CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527 PDF

    P-Channel MOSFET code L1A S

    Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v
    Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state


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    FDC6324L P-Channel MOSFET code L1A S CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v PDF

    CBVK741B019

    Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
    Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.


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    MMPQ3906 SC70-6 SOIC-16 FFB3906 FMB3906 FMB3906 FFB3906 CBVK741B019 F63TNR FDG6302P MMPQ3906 SC70-6 SOIC-16 4977 gm PDF

    FDC6331L

    Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
    Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


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    FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR PDF

    F202

    Abstract: FDZ202P F-202 AF202
    Text: FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


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    FDZ202P FDZ202P F202 F-202 AF202 PDF

    SC70-6 SSOT6

    Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


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    SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A PDF

    CBVK741B019

    Abstract: F63TNR FDC3512 FDC633N
    Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDC3512 CBVK741B019 F63TNR FDC3512 FDC633N PDF

    FDC3535

    Abstract: marking 535
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


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    PDF

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    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


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    Si3445DV PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


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    FDC640P FDC640P NF073 PDF

    FDC633N marking convention

    Abstract: No abstract text available
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    FDC633N NF073 FDC633N marking convention PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    FDC699P FDC699P PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain


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    Si3456DV NF073 NF073 PDF

    marking 606

    Abstract: diode marking EY
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


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    FDC606P FDC606P NF073 marking 606 diode marking EY PDF

    Marking 638

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


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    FDC638P FDC638P NF073 Marking 638 PDF

    155oC

    Abstract: No abstract text available
    Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a


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    FDZ203N FDZ203N 155oC PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    FDC653N NB3E005A NF073 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDC3512 PDF

    7.4v battery charger

    Abstract: 7.4v battery ssot-6 MAX4845 MAX4843 MAX4843ELT MAX4844 MAX4844ELT MAX4845ELT MAX4846
    Text: 19-3649; Rev 0; 4/05 Overvoltage Protection Controllers with Low Standby Current Features The MAX4843MAX4846 overvoltage protection controllers protect low-voltage systems against high-voltage faults of up to 28V. When the input voltage exceeds the overvoltage threshold, these devices turn off a low-cost,


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    MAX4843 MAX4846 MAX4843) MAX4844) MAX4845) MAX4846) MAX4846 7.4v battery charger 7.4v battery ssot-6 MAX4845 MAX4843ELT MAX4844 MAX4844ELT MAX4845ELT PDF

    202P

    Abstract: F202 FDZ202P
    Text: FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space This BGA MOSFET embodies a


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    FDZ202P FDZ202P 202P F202 PDF

    Untitled

    Abstract: No abstract text available
    Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan
    FDC6306P PDF