AM9101

Abstract: P2101 am2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C
Contextual Info: Am9101/Am91L01/Am2101 FAMILY 256x4 Static R /W Random A cce ss Memories PART NUMBER Am2101 Am2101-2 Am 9l01 A Am91 L01A Am2101 -1 Am 9101B Am 91L01ß Am9101C Am91 L01C Am 9101D A CCESS TIME 1000ns 650ns 500ns 400ns 300ns 250ns D IS T IN C T IV E C H A R A C T E R I S T I C S

9141C

Abstract: L 9141 ess7
Contextual Info: Am9141 -Am91L41 4096x1 Static R/W Random Access Memories G E N E R A L D E S C R IP T IO N D IS T IN C T IV E C H A R A C T E R I S T IC S The A m 9 1 4 1 and A m 9 1 L 4 1 products are high perfor­ mance, low-power, 4k-bit, static, read/write random access

l31c

Abstract: Am9131ADC Atn91 Am9131
Contextual Info: Am9131 -Am91L31 1024 x 4 Static R/W Random Access Memories D IS T IN C T IV E C H A R AC TER ISTIC S G E N ER A L DESCRIPTIO N • • • • • The Am9131 and A m 91L31 products are high p erfor­ mance, low-power, 4k-bit, static, read/write random access

Am91L24

Abstract: 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N
Contextual Info: IMPROVED PERFORMANCE WITH THE Am9124 By Alex Shevekov, Paul Liu and Joe Kroeger INTRODUCTION off the top of the chart with a value of about .28mW/bit. Note that the Am91L02C, 2114, 2114L, Am9114C, and Am91L14C are straight lines; their dissipation does not depend on the state of

AM9130APC

Abstract: AM9130BPC AM9130CPC AM9130DPC AM9130EPC AM91L30BPC AM91L30CPC AM91L L30D Am9130/40
Contextual Info: Am9130 •Am91L30 1024 x 4 Static R/W Random Access Memories DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • The Am9130 and Am91L30 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 1024 words by 4 bits per

91L02

Abstract: IR 332 AM9102 91L02A 91L02PC 9102E 9102D 9102C 9102B 9102CP
Contextual Info: Am9102/Am91L02 FAMILY 1024x1 Static R/W Random Access Memories D IST IN C T IV E C H A R A C T E R IS T IC S F U N C TIO N A L D ESCR IP TIO N • The A m 9 1 0 2 F a m ily o f 1 0 2 4 -b it s ta tic N -channel R A M s c o n ta in s m em bers w ith cy c le tim es ranging fro m 650ns to

93422 ram

Contextual Info: a Adva£ Am9122/Am91L22 256x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns Low-power dissipation - Low power 440 mW Commercial 495 mW (Military) • Single 5-volt power supply — ±10% tolerance both

am2112

Abstract: AM9112ADC am9112bpc AM91L12CDM AM9112PC AM9112APC
Contextual Info: Am 9112 /Am91L12 FAMILY 256x4 Static R/W Random Access Memories Part Number Am2112 Am2112-2 Am9112A Am91L12A Am9112B Am91L12B Am9112C Am91L12C Am9112D Access Time 1000ns 650ns 500ns 400ns 300ns 250ns Distinctive Characteristics F U N C T IO N A L DESCR IPTIO N

L41C

Abstract: AM9141BDC AM91L41CDC
Contextual Info: Am9141 *Am91L41 4096x1 Static R/W Random Access Memories D IS T IN C T IV E C H A R A C T E R IS T IC S G E N E R A L D E S C R IP T IO N • • • • • T h e A m 9 1 4 1 and A m 9 1 L 4 1 p ro d u c ts are high p e rfo r­ m ance, lo w -p o w e r, 4 k - b it, s ta tic , re a d /w rite ra n d o m access

intel 2102 Static RAM

Abstract: AM9102 intel 2102 AM9102BPC AM9102BD am91l02bpc AM9102APC AM9102BDM AM9102ADC 1024x1 static ram
Contextual Info: Am9102/Am91L02 FAMILY 1024x1 Static R/W Random Access Memories D IS T IN C T IV E C H A R A C T E R IS T IC S F U N C T IO N A L D E S C R IP T IO N • The A m 9 1 0 2 F a m ily o f 1 0 2 4 -b it s ta tic N -channel R A M s c o nta in s m em bers w ith cycle tim es ranging fro m 650ns to

9130a

Contextual Info: Am9130 *Am91L30 1024 x 4 Static R/W Random Access Memories DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • The Am9130 and Am91L30 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 1024 words by 4 bits per

256X4

Abstract: 1024x4 AM2168 Am91L22
Contextual Info: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active

a8le

Abstract: AM9140ADC 9140B AM9140ADM
Contextual Info: Am9140 •Am91L40 4096x1 Static R/W Random Access Memories GENERAL DESCRIPTION DISTINCTIVE CHARACTERISTICS The Am9140 and Am91L40 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 4096 words by 1 bits per

AM9T

Abstract: AM91L40ADM L40C AM9140APC AM9140BPC AM9140CPC AM9140DPC AM9140EPC AM91L40APC AM91L40BPC
Contextual Info: Am9140 •Am91L40 4096x1 Static R/W Random Access Memories GENERAL DESCRIPTION DISTINCTIVE CHARACTERISTICS The Am9140 and Am91L40 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 4096 words by 1 bits per

Contextual Info: Am9140 •Am91L40 4096x1 Static R/W Random Access Memories G E N E R A L D E SC R IP T IO N D ISTIN CTIV E C H A R A C T E R IS T IC S The Am9140 and Am91L40 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 4096 words by 1 bits per

AM9111ADC

Abstract: am2111a 9111BDC 9111AP AM9111 Am91L1lC L11B 91L11 9111bpc P2111-2
Contextual Info: Am9111/Am91L11/Am2111 FAMILY 256x4 Static R/W Random Access Memories PART NUM BER ACCESS T IM E Am2111-2 Am 9111A A m 9 1 L 1 1A A m 2 1 11-1 Am9111B Am91 L11B Am9111C Am91L1lC Am9111D 650ns 500ns 400ns 300ns 250ns 1000ns D IS T IN C T IV E C H A R A C T E R IS T IC S

Am9130

Abstract: AM9130ADC 9130A Am9130/40
Contextual Info: Am9130 •Am91L30 1024 x 4 Static R/W Random Access Memories DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION The Am9130 and Am91L30 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 1024 words by 4 bits per

pc2101

Abstract: 91L01
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads

AM9112

Abstract: am91l12
Contextual Info: Am9112 2 56 x4 Static RAM ZU 6U JV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise imm unity — full 400 mV Uniform switching characteristics — access times insen­

Contextual Info: Am9131 •Am91L31 1024 x 4 Static R/W Random Access Memories D I S T I N C T I V E C H A R A C T E R I S T IC S G E N E R A L D E S C R IP T I O N I k X 4 organization Fully static data storage — no refreshing Single + 5 V power supply High-speed — access times dow n to 200ns max.

PCB 4210

Abstract: 91L22
Contextual Info: Am9122 256 x 4 Static RAM ZZL6UIV DISTINCTIVE CHARACTERISTICS • • • High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns Low-power dissipation - Low power: 440 mW Commercial 495 mW (Military) • Single 5-volt power supply — ±10% tolerance both

91L22

Contextual Info: it Advanced Micro Devices Am9122/Am91 L22 256x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Single 5-volt power supply — ±10% tolerance both Commercial and Military High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns

Am2101

Abstract: AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW

9112C

Abstract: AM9112 91L12A AM91L12A P2112A maxim 2112
Contextual Info: Am9112 2 5 6 x 4 Static RAM ZL16UIV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen­