SNA-576
Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
Text: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier
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SNA-576
SNA-576
SNA-500)
MMIC 576
110C
155C
SNA-500
SNA-576-TR1
SNA-576-TR2
SNA-576-TR3
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Untitled
Abstract: No abstract text available
Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the
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FMM5046VF
36dBm
FMM5046VF
FCSI0200M200
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S1243
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description x IEEE802.11a WLAN enabled: access points media gateways set top boxes LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,
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SKY65137-11:
IEEE802
SKY65137-11
20-pin,
200851F
S1243
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SKY65137
Abstract: S1770 s414 transistor S1383 S413 S414 s2063
Text: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled: access points media gateways set top boxes LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,
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SKY65137-11:
IEEE802
SKY65137-11
SKY65137-11
64-QAM
200851H
SKY65137
S1770
s414 transistor
S1383
S413
S414
s2063
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transistor kp 303
Abstract: VP15-00-3 transistor 14026
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super
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PC2776TB
PC2776TB
PC2776T
PC2776T.
transistor kp 303
VP15-00-3
transistor 14026
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circuits metal detector
Abstract: SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414
Text: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled: access points media gateways set top boxes LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,
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SKY65137-11:
IEEE802
SKY65137-11
SKY65137-11
64-QAM
200851G
circuits metal detector
SKY65137
420 MMIC
802.11a Amplifier
METAL DETECTOR circuit for make
Microwave detector diodes 18 GHz
S1383
S1770
S413
S414
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Untitled
Abstract: No abstract text available
Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for
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FMM5716X
60GHz
FMM5716X
1906B,
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60Ghz
Abstract: FMM5715X 544 mmic 60GHz transistor 7400 chip 112 amp 827 578 ED-4701 power amplifier mmic fmm5715
Text: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications
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FMM5715X
60GHz
FMM5715X
1906B,
544 mmic
60GHz transistor
7400 chip 112
amp 827 578
ED-4701
power amplifier mmic
fmm5715
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60Ghz
Abstract: FMM5716X ED-4701
Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for
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FMM5716X
60GHz
FMM5716X
1906B,
ED-4701
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Untitled
Abstract: No abstract text available
Text: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications
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FMM5715X
60GHz
FMM5715X
1906B,
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H580
Abstract: HMC580ST89E HMC580ST89
Text: HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G
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HMC580ST89
580ST89E
HMC580ST89E
HMC580ST89
H580
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nec 16312
Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan
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PC1677
PC2708
PC2762/2763
PC2771/2776
P12152EJ2V0AN00
an88-6130
nec 16312
c1677
PC1678G
TRANSISTOR MARKING CODE 1P 6PIN
UPC1677C
PC1677C
PC2709T
marking code C1E mmic
4327 030 11011
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Marking M2
Abstract: No abstract text available
Text: GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V
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OT-23
Q62702-M9
GPW05794
Marking M2
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AN-S003
Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
Text: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the
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5091-9054E
AN-S003
1 kilo ohm resistor specifications
bonding capillary
hp mmic
MSA-0100
MSA-0200
MSA-0300
MSA-0500
MSA-0600
MSA-0700
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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dlva
Abstract: MIL-I-46058C Flip Chip on flex BGA PROFILING diplexers detector video compression amplifier
Text: RF/Microwave and Optoelectronics Over 45 Years of Proven Performance in Microelectronics Packaging Over 45 Years of Proven Performance Teledyne Microelectronic Technologies provides multichip modules and microelectronics for today’s most demanding applications. Designing, fabricating and testing high
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.
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uPC2776TB
PC2776TB
/iPC2776T
/iPC2776TB
PC2776T.
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TRANSISTOR BO 345
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.
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UPC2776TB
PC2776TB
uPC2776TB
uPC2776T
PC2776T.
WS60-00-1
C10535E)
TRANSISTOR BO 345
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UPC1677C
Abstract: UPC1677B
Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C upci677c - NOISE FIGURE AND GAIN V » . FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT:+19.5 dBm
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UPC1677B
UPC1677C
upci677c
UPC1677
UPC1677B)
UPC1677C
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Marking M2
Abstract: marking M2 SOT23 INFINEON TD-9012 jrf SOT-23
Text: Infineon I êchncÈogiei GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V
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OT-23
Q62702-M9
point01-01
CMY91
Marking M2
marking M2 SOT23 INFINEON
TD-9012
jrf SOT-23
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SNA-576
Abstract: No abstract text available
Text: Stanford Microdevices Product Description SNA-576 Stanford Microdevices' SNA-576 is a GaAs monolithic broadband amplifier housed in a tow-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V, DC-3 GHz, Cascadable
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SNA-576
SNA-500)
SNA-576
Ampl36
-190C
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Untitled
Abstract: No abstract text available
Text: i Stanford Microdevices Product Description SNA-576 Stanford M icrodevices’ SNA-576 is a GaAs m onolithic broadband am plifier housed in a low-cost stripline ceram ic package. This am plifier provides 19dB of gain when biased at 70m A and 5.0V. DC-3 GHz, Cascadable
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SNA-576
SNA-576
SNA-500)
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Untitled
Abstract: No abstract text available
Text: ell Stanford Microdevices Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth
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SLN-386
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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