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    AMPLIFIER RF CLASS B FET MOSFET Search Results

    AMPLIFIER RF CLASS B FET MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    AMPLIFIER RF CLASS B FET MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


    Original     		PDF AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier

    SM4W103-ND

    Abstract: diode t25 4 j6 sot23 theta jc value SM4W-5 SM4W502-ND potentiometer 10kohms
    Text: PRELIMINARY PFM18030 SPECIFICATION 1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile DCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM18030SM includes two stages Package Type: Surface Mount


    Original     		PDF PFM18030 PFM18030SM SM4W103-ND diode t25 4 j6 sot23 theta jc value SM4W-5 SM4W502-ND potentiometer 10kohms

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PFM21030 SPECIFICATION 2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile UMTS module provides excellent linearity and efficiency in Package Type: Surface Mount a low-cost surface mount package. The PFM21030 includes two stages


    Original     		PDF PFM21030 PFM21030SM

    Cree Microwave

    Abstract: PFM21030 PFM21030F PFM21030SM zener diode c20 C3354
    Text: PRELIMINARY PFM21030 SPECIFICATION 2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile UMTS module provides excellent linearity and efficiency in Package Type: Surface Mount a low-cost surface mount package. The PFM21030 includes two stages


    Original     		PDF PFM21030 PFM21030SM Cree Microwave PFM21030F PFM21030SM zener diode c20 C3354

    diode t25 4 j6

    Abstract: PFM19030 PFM19030F PFM19030SM outline of the heat sink for Theta JC grm39 F219 SM4W103-ND diode t25 4 c6
    Text: PFM19030 SPECIFICATION 1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile PCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM19030 includes two stages of Package Type: Surface Mount


    Original     		PDF PFM19030 PFM19030SM diode t25 4 j6 PFM19030F PFM19030SM outline of the heat sink for Theta JC grm39 F219 SM4W103-ND diode t25 4 c6

    47UF

    Abstract: LM7301 PFM21030SM
    Text: PFM21030SM PRELIMINARY SPECIFICATION 2110-2170 MHz, 30W, 2-Stage Surface Mount Power Module Enhancement-Mode Lateral MOSFETs This versatile UMTS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM21030SM includes two stages of amplification, along with internal tracking FETs that are


    Original     		PDF PFM21030SM LM7301 PFM21030SM 47UF LM7301

    PFM18030SM

    Abstract: LM8261M5
    Text: PFM18030SM PRELIMINARY SPECIFICATION 1805-1880 MHz, 30W, 2-Stage Surface Mount Power Module Enhancement-Mode Lateral MOSFETs This versatile DCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM18030SM includes two stages of amplification, along with internal sense FETs that are on the same


    Original     		PDF PFM18030SM LM8261M5 OT23-5

    Untitled

    Abstract: No abstract text available
    Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.


    Original     		PDF

    planar transformer theory

    Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
    Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A

    1n4740 MOTOROLA

    Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
    Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y 1n4740 MOTOROLA 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740

    PFM19030SM

    Abstract: No abstract text available
    Text: PFM19030SM PFM19030SM SPECIFICATION 1930-1990 MHz, 30W, 2-Stage Surface Mount Power Module Enhancement-Mode Lateral MOSFETs This versatile PCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM19030SM includes two stages of amplification, along with internal sense FETs that are on the same


    Original     		PDF PFM19030SM PFM19030SM LM8261M5 OT23-5

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    hf class AB power amplifier mosfet

    Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
    Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 hf class AB power amplifier mosfet Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    6a3 diode zener

    Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 6a3 diode zener 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331

    MRF136

    Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 MRF136 zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068

    SM4W103-ND

    Abstract: zener diode on 822 GRM42 PFM18030 PFM18030F PFM18030SM SM4W502-ND grm39 C3345
    Text: PRELIMINARY PFM18030 SPECIFICATION 1805­1880 MHz, 30W, 2­Stage Power Module Enhancement­Mode Lateral MOSFETs This versatile DCS module provides excellent linearity and efficiency in a low­cost surface mount package. The PFM18030SM includes two stages


    Original     		PDF PFM18030 PFM18030SM PFM18030SM SM4W103-ND zener diode on 822 GRM42 PFM18030F SM4W502-ND grm39 C3345

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    MRF141

    Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141 G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141/D*

    RF MOSFET CLASS AB

    Abstract: AN211-A motorola bipolar transistor data manual
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF 14-CHANNEL MRF141

    Granberg

    Abstract: eb104 mylar capacitor 154 EB-104 Wideband Power Transformers Amidon Tech FB-77-6301 cermet trimpot motorola an215a amplificador 50 watt
    Text: Order this document by AR314/D AR314 A 60-WATT PEP LINEAR AMPLIFIER Prepared By Jose I. Cracovski Reprinted w ith perm ission o f R.F. Design Feb. 1988 issue. 1988 C ardiff Publishing Co. All Rights Reserved. MOTOROLA Semiconductor Products Inc. r f featured technology


    OCR Scan     		PDF AR314/D AR314 60-WATT C77690 Granberg eb104 mylar capacitor 154 EB-104 Wideband Power Transformers Amidon Tech FB-77-6301 cermet trimpot motorola an215a amplificador 50 watt