Untitled
Abstract: No abstract text available
Text: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a
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CGHV35150
CGHV35150
CGHV35150F-TB
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Untitled
Abstract: No abstract text available
Text: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a
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CGHV35150
CGHV35150
CGHV35150F-TB
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Zener C212
Abstract: diode zener c71 zener ma 1150
Text: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features 18 dB Gain at 2000 MHz 32.5 dBm P1dB at 2000 MHz 49 dBm Output IP3 at 2000 MHz MTTF > 100 Years Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX621
ASX621,
Zener C212
diode zener c71
zener ma 1150
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sdars
Abstract: BFP740FESD BFP640FESD BFP640 EICEDRIVER symbian C166 LQW15A 26DBM-K vinaxTM l1
Text: BF P640 F ES D High Gain and Lo w Noise Amplifier B F P640 F ESD fo r S D A R s 2nd S t a ge 2.33 GHz Applic atio n Technic al Rep ort T R 1019 Revision: no Revision 2010-04-23 RF and Protecti on Devi c es Edition 2010-04-23 Published by Infineon Technologies AG
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BFP640FESD
2200MHz
33GHz
TR1019,
BFP640FESD
sdars
BFP740FESD
BFP640
EICEDRIVER
symbian
C166
LQW15A
26DBM-K
vinaxTM l1
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26 sot-363 rf power amplifier
Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
Text: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package
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UPC2745TB
OT-363
UPC2746TB
UPC2747TB
UPC2748TB
IIP32
UPC8190K
DC-10
UPC8194K
26 sot-363 rf power amplifier
UPC3232TB
upc8211
UPC3223TB
QFN2020
uPC2710
s06 A
UPC1678GV
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MAX9986A
Abstract: No abstract text available
Text: 19-4827; Rev 0; 10/09 TION KIT EVALUA BLE AVAILA SiGe, High-Linearity, 2300MHz to 4000MHz Downconversion Mixer with LO Buffer Features The MAX19998 single, high-linearity downconversion mixer provides 8.7dB of conversion gain, +24.3dBm input IP3, +11.3dBm 1dB input compression point,
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2300MHz
4000MHz
MAX19998
2600MHz
4300MHz
MAX19996A.
MAX9986A
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MAX9986A
Abstract: MAX19998ETP TC4-1W-17
Text: 19-4827; Rev 0; 10/09 TION KIT EVALUA BLE AVAILA SiGe, High-Linearity, 2300MHz to 4000MHz Downconversion Mixer with LO Buffer Features The MAX19998 single, high-linearity downconversion mixer provides 8.7dB of conversion gain, +24.3dBm input IP3, +11.3dBm 1dB input compression point,
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2300MHz
4000MHz
MAX19998
2600MHz
4300MHz
MAX19996A.
MAX9986A
MAX19998ETP
TC4-1W-17
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TQ9132B
Abstract: TQ9132 TQ9132-BN
Text: TQ9132-BN Data Sheet Wide Band Power Amplifier Gain Block Features Functional Block Diagram IN 3 6 OUT • • • • • • GND 4 5 GND Applications VDD 1 8 GND GND GN D 2 7 GND TQ9132B Product Description The TQ9132 amplifier is a 500-2500 MHz amplifier capable of providing
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TQ9132-BN
TQ9132B
TQ9132
TQ9132B
TQ9132-BN
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Untitled
Abstract: No abstract text available
Text: TQ9132-BN Data Sheet Wide Band Power Amplifier Gain Block Features Functional Block Diagram IN 3 6 OUT • • • • • • GND 4 5 GND Applications VDD 1 8 GND GND 2 7 GND TQ9132B Product Description The TQ9132 amplifier is a 500-2500 MHz amplifier capable of providing
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TQ9132-BN
TQ9132B
TQ9132
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GEC Plessey amplifier
Abstract: Plessey semiconductors sl6140 Plessey semiconductors Linear Integrated circuit SL6140
Text: DS2159 - 4.1 SL6140 400MHz WIDEBAND AGC AMPLIFIER Supersedes Edition in May 1991 Professional Products IC Handbook The SL6140 is an integrated broadband AGC amplifier, designed on an advanced bipolar process. The amplifier provides over 15dB of linear gain into 50Ω at 400MHz. Gain
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DS2159
SL6140
400MHz
SL6140
400MHz.
SL6140/NA/MP
SL6140/NA/MPTC
GEC Plessey amplifier
Plessey semiconductors sl6140
Plessey semiconductors Linear Integrated circuit
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Untitled
Abstract: No abstract text available
Text: FMM5061VF FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage
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FMM5061VF
FMM5061VF
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FMM5061VF
Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage
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FMM5061VF
FMM5061VF
FMM5061
x-Band High Power Amplifier
ED-4701
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FMM5061VF
Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage
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FMM5061VF
FMM5061VF
x-band power amplifier
ED-4701
x-Band High Power Amplifier
eudyna GaAs FET Amplifier
x-band mmic
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50 V DC CK06
Abstract: gold capacitor AM2931-110 42V32
Text: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN
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AM2931-110
AM2931-110
50 V DC CK06
gold capacitor
42V32
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Untitled
Abstract: No abstract text available
Text: 19-4402; Rev 0; 1/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of
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2000MHz
3900MHz
MAX19996A
2100MHz
4000MHz,
MAX19996
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AM2931-110
Abstract: 42V32
Text: AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN
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AM2931-110
AM2931-110
42V32
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100uf 63v electrolytic capacitor
Abstract: CAPACITOR 33PF ceramic capacitor -33pf capacitor 100uF 63V radar amplifier s-band 2.7 2.9 GHZ AM2729-125 Capacitor 100uF A3080
Text: AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 125 W MIN. WITH 7.0 dB GAIN
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AM2729-125
AM2729-125
100uf 63v electrolytic capacitor
CAPACITOR 33PF
ceramic capacitor -33pf
capacitor 100uF 63V
radar amplifier s-band 2.7 2.9 GHZ
Capacitor 100uF
A3080
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Untitled
Abstract: No abstract text available
Text: 19-4402; Rev 1; 5/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of
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2000MHz
3900MHz
MAX19996A
3900MHz
2100MHz
4000MHz,
MAX19996
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SL611 Plessey
Abstract: plessey SL610 Plessey ssb transceiver sl612c plessey Plessey sl612 SL611 SL612 ds3630 SL611C SL612C
Text: ADVANCE INFORMATION DS3630 - 1.1 SL610, SL611 & SL612 RF/IF AMPLIFIER The SL610C, SL611C and SL612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and 50 times respectively and the upper frequency response varies from 15MHz to 120MHz according to type .
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DS3630
SL610,
SL611
SL612
SL610C,
SL611C
SL612C
15MHz
120MHz
SL611 Plessey
plessey SL610
Plessey ssb transceiver
sl612c plessey
Plessey sl612
SL611
SL612
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EMM5068X
Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage
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EMM5068X
EMM5068X
X-band amplifier
SCL 1058
x-band mmic
MMIC X-band amplifier
ED-4701
emm5068
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JESD51-7
Abstract: MAX9993
Text: 19-4402; Rev 1; 5/09 SiGe, High-Linearity, 2000MHz to 3900MHz Downconversion Mixer with LO Buffer The MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure for 2000MHz to 3900MHz WCS, LTE, WiMAX , and MMDS wireless infrastructure applications. With an ultra-wide LO frequency range of
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2000MHz
3900MHz
MAX19996A
3900MHz
2100MHz
4000MHz,
MAX19996
JESD51-7
MAX9993
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Untitled
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3630 - 1.1 SL610, SL611 & SL612 RF/IF AMPLIFIER The SL610C, SL611C and SL612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and
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DS3630
SL610,
SL611
SL612
SL610C,
SL611C
SL612C
15MHz
120MHz
20dBspecification,
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X-band amplifier
Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the
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EMM5068X
EMM5068X
X-band amplifier
462 008 0004 00 AF
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5570
Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package
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NE34018
NE34018-T1
NE34018-T2
5570
C10535E
NE34018
NE34018-T1
NE34018-T2
VP15-00-3
4069 NOT GATE IC
nec 4308
IC GA-08
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