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    CGHV35150 Search Results

    CGHV35150 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV35150F Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 150W Original PDF
    CGHV35150F-AMP Wolfspeed CGHV35150F DEV BOARD WITH HEMT Original PDF
    CGHV35150F-AMP Wolfspeed CGHV35150F DEV BOARD WITH HEMT Original PDF
    CGHV35150F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV35150F Original PDF
    CGHV35150P Wolfspeed 150W, GAN HEMT, 50V, 2.9-3.5GHZ, Original PDF
    CGHV35150P Wolfspeed 150W, GAN HEMT, 50V, 2.9-3.5GHZ, Original PDF
    CGHV35150-TB Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST FIXTURE FOR CGHV35150F Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV35150 CGHV35150 CGHV35150F-TB

    Untitled

    Abstract: No abstract text available
    Text: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV35150 CGHV35150 CGHV35150F-TB