VK200 INDUCTOR
Abstract: inductor vk200 VK200 inductor of high frequencies
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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RF175LU
MRF175LV
F175L
MRF175LU
MRF175LV
VK200 INDUCTOR
inductor vk200
VK200 inductor of high frequencies
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MTP15N05E
Abstract: 221A-06 AN569
Text: M O T O R O L A SC X S T R S / R F bflE D • b 3 b ? 2 S 4 G G [ifl752 2ßl MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP15N05E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancem ent-Mode Silicon G ate
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110Tb
MTP15N05E
MTP15N05E
221A-06
AN569
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Untitled
Abstract: No abstract text available
Text: International Rectifier PD 9.1097A IRF7105 preliminary HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7105
Q02b4R7
111161X
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2N3904
Abstract: AN1040 AN569 DS3902 MTG4N100E MTH6N100E
Text: Order this data sheet by MTG4N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTG4N100E Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES rDS on = 2.0 OHMS M AX 1000 VOLTS
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MTG4N100E/D
MTG4N100E/D
2N3904
AN1040
AN569
DS3902
MTG4N100E
MTH6N100E
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MOSFET MTH40N10
Abstract: 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 40N 08 M T H 40N 10 M T H 40N 05 M T H 40N 06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S TM O S POWER FETs and AMPERES These TM O S Pow er FETs are designed fo r lo w
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1002C
TH40N
06----MTH40N
MOSFET MTH40N10
40n06
MTH40N10
40n08
40n10
MTH40N08
40N05
40n0
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surface mount transistor ag qr
Abstract: amps ciss hen vd
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD4N20E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 200 VOLTS n DS on = 12 OHM N-Channel Enhancement-Mode Silicon Gate
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MTD4N20E
0E-04
0E-03
0E-02
0E-01
surface mount transistor ag qr
amps ciss hen vd
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1RLZ24
Abstract: F17a 557C AN-994 IRLZ24 IRLZ24S SMD-220 smd kir RK 25 smd diode marking 69a
Text: International |B» Rectifier PD -9.557C IRLZ24 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive • R D S (on S p ecifie d a t V g s = 4 V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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IRLZ24
O-220
1RLZ24
F17a
557C
AN-994
IRLZ24S
SMD-220
smd kir
RK 25
smd diode marking 69a
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Untitled
Abstract: No abstract text available
Text: International i“R Rectifier 4Ö55452 00 15 7 4 2 34=ï • INR PD-9.637C IRFRC20 IRFUC20 HEXFET Power M O SFET • • • • • • • INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFRC20 Straight Lead (IRFUC20) Available in Tape & Reel
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IRFRC20
IRFUC20
IRFRC20)
IRFUC20)
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b15n06v
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTB15N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an orv-resistance
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QE-05
0E-04
b15n06v
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MTP4N05L
Abstract: mtp4n05
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 4N 05L M TP 4N 06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate TM O S TM O S POWER FETs LOGIC LEVEL 4 AMPERES These Logic Level TM O S Power FETs are designed fo r high
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MTP4N05L
mtp4n05
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AVALANCHE TRANSISTOR 2n
Abstract: fet dpak
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D 2N 40E TM O S E-FET™ High E nergy P o w er FET DPAK for S u rfa c e M ount M otorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N-Channel Enhancement-Mode Silicon Gate
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marking SH SOT23 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGSF1P02LT1/D SEMICONDUCTOR TECHNICAL DATA Green t , L ine MGSF1P02LT1 Motorola Preferred Device Low rDS(on) S m all-S ig n al MOSFETs TM OS Single P -C hannel Field E ffect Transistors Part of the GreenLine Portfolio of devices with e n e rg y conserving traits.
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MGSF1P02LT1/D
MGSF1P02LT1
marking SH SOT23 mosfet
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IR7811
Abstract: 30BQ015 GRM235Y5V226Z010 SC1405 SC1405TS
Text: m *A SEMTECH Todby ’ b Results — .1 0 morrow s Visio August 31, 2000 SC1405 hig h s p e e d s y n c h r o n o u s p o w e r MOSFET SMART DRIVER TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal
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SC1405
SC1405
3000pF
TSSOP-14
153AB1
ECN00-1259
IR7811
30BQ015
GRM235Y5V226Z010
SC1405TS
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1N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D a ta S heet M T D 1N 50E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r DPAK for S u rfa c e M ount N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n
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MTP15N05
Abstract: MTP15N06 TP15N05 P-15N 15N05 5N06 5N05
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M TP15N05 MTP15N06 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is t o r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 15 AMPERES These TM O S Pow er FETs are designed fo r lo w vo ltag e , high
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TP15N05
MTP15N06
MTP15N05,
-220A
MTP15N05
MTP15N06
P-15N
15N05
5N06
5N05
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45N15
Abstract: No abstract text available
Text: MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TM 45N 15 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FET 45 AMPERES This TM O S Pow er FET is designed fo r m e d iu m vo ltag e , high
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2N02L
Abstract: FT2N
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t Tran sisto r N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount iTT T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T d esig n ed to w ith sta n d high e n e rg y in th e a va la n ch e and c o m m u ta
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OT-223
2N02L
FT2N
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1n60e
Abstract: MTD1N60E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N60E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on = 8.0 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-04
0E-03
OE-02
0E-01
1n60e
MTD1N60E
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transistor z3m
Abstract: Z3M IC z3m Transistor Z3M Y
Text: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM
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MTB75N03HDL/D
2PHX43416-0
transistor z3m
Z3M IC
z3m Transistor
Z3M Y
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4652 fet
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTE125N20E ISOTOP™ TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r M otorola Protorrod Davie« N-Channel Enhancement-Mode Silicon Gate • • • • • • • TMOS POWER FET
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MTE125N20E
4652 fet
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Untitled
Abstract: No abstract text available
Text: H S s E IV IT E C H Wa Today’sResults.tom orrow's Visio August 26, 1999 SC1405 high speed syn c h r o n o u s po w er MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal
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SC1405
L805-498-2111
SC1405
3000pF
TSSOP-14
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mtp3n45
Abstract: VG-11T
Text: M O TO ROLA • SEM ICONDUCTOR TECHNICAL DATA M T P 3N 45 M T P 3N 50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES rDS on = 3 OHMS 450 and 500 VOLTS These TM O S Pow er FETs are designed fo r m e d iu m voltage,
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MTP3N45,
mtp3n45
VG-11T
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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TSF1P02HD/D
46A-02
MICR08
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip
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0E-05
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