xxww
Abstract: Chip Inductor CS Coilcraft
Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"
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1008LS
xxww
Chip Inductor CS Coilcraft
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ADF41020
Abstract: db18 DB9 db15 DB-21 DB14 pin configuration DB21 DB16 1030401 MAG-S11 DB23
Text: AVDD DVDD VP RSET CPGND REFERENCE REFIN CLK DATA LE 24-BIT INPUT REGISTER R COUNTER PHASE FREQUENCY DETECTOR R COUNTER LATCH LOCK DETECT FUNCTION LATCH A, B COUNTER LATCH CHARGE PUMP CP CURRENT SETTING 1 CURRENT SETTING 2 CPI3 CPI2 CPI1 CPI6 CPI5 CPI4 HIGH Z
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24-BIT
ADF41020
ADSP-BF527
ADuC7020
08-16-2010-B
MO-220-WGGD-1.
ADF41020
db18
DB9 db15
DB-21
DB14 pin configuration
DB21
DB16
1030401
MAG-S11
DB23
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PDF
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MHz frequency counter
Abstract: No abstract text available
Text: PLL Frequency Synthesizer ADF4106-EP Data Sheet FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65
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ADF4106-EP
ADF4106-EP
16-Lead
20-Lead
04-09-2012-B
RU-16
CP-20-1
CP-20-1
MHz frequency counter
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VCO190-902T
Abstract: M3500-2235 8051 edge detection M3500
Text: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning
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ADF4110/ADF4111/ADF4112/ADF4113
ADF4110
13-bit)
14-bit
16-Lead
CP-20-6
CP-20-1
D03496-0-8/12
VCO190-902T
M3500-2235
8051 edge detection
M3500
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TDS714L
Abstract: modulator 26MHz AD8302 spur spur free fractional PLL pong VCO190-1843T ADF4193 DCS1800 GSM900 TRANSISTOR SDM M6
Text: Low Phase Noise, Fast Settling PLL Frequency Synthesizer ADF4193 FEATURES GENERAL DESCRIPTION New, fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled by 20 μs 0.5° rms phase error at 2 GHz RF output
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ADF4193
ADF4193
CP-32-3)
ADF4193BCPZ
ADF4193BCPZ-RL1
ADF4193BCPZ-RL71
EVAL-ADF4193EB1
EVAL-ADF4193EB2
32-Lead
TDS714L
modulator 26MHz
AD8302
spur
spur free fractional PLL pong
VCO190-1843T
DCS1800
GSM900
TRANSISTOR SDM M6
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ADF4206
Abstract: ADF4207 ADF4208 VCO190-1068U wcdma receiver 902D ad4208
Text: a Dual RF PLL Frequency Synthesizers ADF4206/ADF4207/ADF4208 FEATURES ADF4206: 550 MHz/550 MHz ADF4207: 1.1 GHz/1.1 GHz ADF4208: 2.0 GHz/1.1 GHz 2.7 V to 5.5 V Power Supply Selectable Charge Pump Supply VP Allows Extended Tuning Voltage in 3 V Systems Selectable Charge Pump Currents
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ADF4206/ADF4207/ADF4208
ADF4206:
Hz/550
ADF4207:
ADF4208:
ADF4206
precision-20)
C01036
RU-16)
ADF4207
ADF4208
VCO190-1068U
wcdma receiver
902D
ad4208
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47-2001
Abstract: ANG-S21 TGF4124-EPU
Text: 4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz
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TGF4124-EPU
TGF4124-EPU
47-2001
ANG-S21
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86185
Abstract: No abstract text available
Text: PLL Frequency Synthesizer ADF4108 Data Sheet FEATURES GENERAL DESCRIPTION 8.0 GHz bandwidth 3.2 V to 3.6 V power supply Separate charge pump supply VP allows extended tuning voltage in 3.3 V systems Programmable, dual-modulus prescaler 8/9, 16/17, 32/33, or 64/65
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20-lead
ADF4108
ADF4108
detectorDF4108BCPZ-RL7
EVAL-ADF4108EBZ1
012508-B
CP-20-1
86185
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RO4850
Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
MCR 052 PIN 100
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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Untitled
Abstract: No abstract text available
Text: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm
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TGF4118
TGF4118
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ANGS11
Abstract: No abstract text available
Text: MMA-022028 2 - 20 GHz Fully Matched Distributed Power Amplifier 28 dBm Power Amplifier Preliminary Data Sheet August 2007 Features: • Usable Frequency Range: 2-20 GHz • Excellent RF Performance: o 28 dBm P1dB o 7 dB Gain • MTTF > 100 years @ 85°C ambient temperature
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MMA-022028
MMA-022028
ANGS11
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RO4850
Abstract: 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
C1005C0G1H4R7C
c1005* MCH155
toko 4828
PHEMT marking code a
0322E
GaAs 0.15 pHEMT
A004R
MCH155
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Untitled
Abstract: No abstract text available
Text: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The
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AM030WX-BH-R
DC-10
AM030WX-BH-R
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ADF4106SCPZ-EP
Abstract: ADF4106 E4440A adf4106e
Text: PLL Frequency Synthesizer ADF4106-EP FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65 Programmable charge pump currents
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ADF4106-EP
ADF4106-EP
ADF4106-SRU-EP
ADF4106-SRU-EP-R7
ADF4106-SCPZ-EP
ADF4106-SCPZ-EP-R7
16-Lead
20-Lead
ADF4106SCPZ-EP
ADF4106
E4440A
adf4106e
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113 marking code transistor ROHM
Abstract: A004R MCH155 MGA-655T6 c1005* MCH155 CW 7810 RO4850
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
MGA-655T6-BLKG
MGA-655T6-TR1G
MGA-655T6-TR2G
AV02-0322EN
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
CW 7810
RO4850
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ADF4106 design example
Abstract: ADF4106 ADF4106BRU ADF4106BCP
Text: a PLL Frequency Synthesizer ADF4106 GENERAL DESCRIPTION FEATURES 6.0 GHz Bandwidth 2.7 V to 3.3 V Power Supply Separate Charge Pump Supply VP Allows Extended Tuning Voltage in 3 V Systems Programmable Dual Modulus Prescaler 8/9, 16/17, 32/33, 64/65 Programmable Charge Pump Currents
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ADF4106
ADF4106
20-Leadless
CP-20)
C02720
ADF4106 design example
ADF4106BRU
ADF4106BCP
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ADF4106
Abstract: ADF4106BRU ADF4106BRU-REEL DB9 db15 ADF4106 die
Text: PLL Frequency Synthesizer ADF4106 FEATURES 6.0 GHz Bandwidth 2.7 V to 3.3 V Power Supply Separate Charge Pump Supply VP Allows Extended Tuning Voltage in 3 V Systems Programmable Dual-Modulus Prescaler 8/9, 16/17, 32/33, 64/65 Programmable Charge Pump Currents
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ADF4106
ADF4106
5/03--Data
C02720
ADF4106BRU
ADF4106BRU-REEL
DB9 db15
ADF4106 die
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3B1-13M0
Abstract: ADF1118 ADF4116 ADF4117 ADF4118 VCO1901960T VCO190-1960T
Text: a RF PLL Frequency Synthesizers ADF4116/ADF4117/ADF4118 GENERAL DESCRIPTION FEATURES ADF4116: 550 MHz ADF4117: 1.2 GHz ADF4118: 3.0 GHz 2.7 V to 5.5 V Power Supply Separate V P Allows Extended Tuning Voltage in 3 V Systems Selected Charge Pump Currents Dual Modulus Prescaler
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ADF4116/ADF4117/ADF4118
ADF4116:
ADF4117:
ADF4118:
ADF4117/ADF4118:
ADF4116
RU-16)
3B1-13M0
ADF1118
ADF4117
ADF4118
VCO1901960T
VCO190-1960T
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Untitled
Abstract: No abstract text available
Text: RF PLL Frequency Synthesizers ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet FEATURES GENERAL DESCRIPTION ADF4110: 550 MHz; ADF4111: 1.2 GHz; ADF4112: 3.0 GHz; ADF4113: 4.0 GHz 2.7 V to 5.5 V power supply Separate charge pump supply VP allows extended tuning
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ADF4110/ADF4111/ADF4112/ADF4113
ADF4110
13-bit)
14-bit
16-Lead
D03496-0-5/12
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pulse doppler radar
Abstract: 06333 4 bit mod 16 d flip-flop VCO190-1843T d0945 circuit diagram of MOD 64 counter
Text: Low Phase Noise, Fast Settling, 6 GHz PLL Frequency Synthesizer ADF4196 Data Sheet FEATURES GENERAL DESCRIPTION Fast settling, fractional-N PLL architecture Single PLL replaces ping-pong synthesizers Frequency hop across GSM band in 5 s with phase settled
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ADF4196
ADF4196
32-Lead
GSM1800)
CP-32-2
CP-32-2
EVAL-ADF4193EBZ1
pulse doppler radar
06333
4 bit mod 16 d flip-flop
VCO190-1843T
d0945
circuit diagram of MOD 64 counter
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Untitled
Abstract: No abstract text available
Text: 18 GHz Microwave PLL Synthesizer ADF41020 Data Sheet FEATURES GENERAL DESCRIPTION 18 GHz maximum RF input frequency Integrated SiGe prescaler Software compatible with the ADF4106/ADF4107/ADF4108 family of PLLs 2.85 V to 3.15 V PLL power supply Programmable dual-modulus prescaler
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ADF41020
ADF4106/ADF4107/ADF4108
HBM/1500
ADF41020
08-16-2010-B
20-Lead
CP-20-6)
ADF41020BCPZ
ADF41020BCPZ-RL7
EV-ADF41020EB1Z
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Untitled
Abstract: No abstract text available
Text: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz
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TGF4118-EPU
TGF4118-EPU
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Untitled
Abstract: No abstract text available
Text: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz
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TGF4124-EPU
TGF4124-EPU
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