Untitled
Abstract: No abstract text available
Text: AO3402,AO3402L N-Channel Enhancement Mode Field Effect Transistor TO-236 Features Top View SOT-23 VDS (V) = 30V ID = 4 A RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 110mΩ (VGS = 2.5V) D S G General Description D The AO3402 uses advanced trench technology to
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AO3402
AO3402L
O-236
OT-23)
AO3402L(
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AO3402L
Abstract: AO3402
Text: Rev 2: Nov 2004 AO3402, AO3402L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This
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AO3402,
AO3402L
AO3402
AO3402L(
O-236
OT-23)
AO3402L
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AO3402
Abstract: AO3402L
Text: AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO3402
AO3402/L
AO3402
AO3402L
-AO3402L
O-236
OT-23)
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PDF
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Untitled
Abstract: No abstract text available
Text: AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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Original
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AO3402
AO3402
AO3402L
AO3402L
O-236
OT-23)
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PDF
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