AO3415L Search Results

AO3415L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO3415L_107		Alpha & Omega Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V SOT23		Original	PDF

AO3415L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3415 AO3415 AO3415L AO3415L O-236 OT-23) OT-23
AO3415L Abstract: AO3415 Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3415 AO3415/L AO3415 AO3415L -AO3415L O-236 OT-23)
Untitled Abstract: No abstract text available Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3415 AO3415 AO3415L AO3415L O-236 OT-23)
MEC1308-NU Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4	Original	PDF	VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
AO3415L Abstract: ao3415 Text: Rev 3: May 2004 AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3415 AO3415 AO3415L AO3415L O-236 OT-23)