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    AO3418L Search Results

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    AO3418L Price and Stock

    Alpha & Omega Semiconductor AO3418L

    MOSFET N-CH 30V 3.8A SOT23-3
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    AO3418L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO3418L Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO3418L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: AO3418, AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor TO-236 Top View (SOT-23) Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) General Description The AO3418 uses advanced trench technology to


    Original     		PDF AO3418, AO3418L O-236 OT-23) AO3418

    AO3418L

    Abstract: AO3418 8570M
    Text: Rev 3: Nov 2004 AO3418, AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This


    Original     		PDF AO3418, AO3418L AO3418 O-236 OT-23) AO3418L 8570M

    HTGB

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO3418/AO3418L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 16, 2005 1 This AOS product reliability report summarizes the qualification result for AO3418. Accelerated


    Original     		PDF AO3418/AO3418L, AO3418. AO3418 10-5eV Mil-Std-105D HTGB

    AO3418L

    Abstract: AO3418
    Text: AO3418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418/L uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO3418 AO3418/L AO3418 AO3418L -AO3418L O-236 OT-23)

    Untitled

    Abstract: No abstract text available
    Text: AO3418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418 uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO3418 AO3418 AO3418L AO3418L O-236 OT-23)