AO4401
Abstract: ao4800
Text: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4403
Abstract: 4801 soic8 AO4400
Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4402
Abstract: AO4800 mpf201 AO4400 AO4401
Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4400
Abstract: AO4401 AO4800
Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in
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