Contextual Info: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

MX3000ASG

Abstract: EM8475 compal PW172A AK4363 c3381c sst39vf080-70-4c-ei TE7782 Compal Electronics 915GM
Contextual Info: A B C D E 1 1 2 2 WT2 HAR00 LA-2831 Schematic 3 3 4 4 2005/03/11 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2006/03/11 Deciphered Date SCHEMATIC, M/B LA-2831 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

CX20551

Abstract: MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta
Contextual Info: 1 2 3 4 5 6 PCB STACK UP 8 CT6 BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : GND Calistoga / Yonah /ICH-7m CPU THERMAL SENSOR LAYER 3 : IN1 A 7 CPU Yonah/Merom LAYER 4 : IN2 LAYER 5 : VCC XXX Pins uPGA LAYER 6 : BOT 14.318MHz PG 5 PG 38 CLOCK GEN PG 3,4 SBLINKCLK, SBLINKCLK#

Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM

AO4413L

Abstract: AO4413
Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM

max1532a

Abstract: compal ATI-RS400MD diod PR150 keyboard and touchpad schematic sst39vf080-70-4c-ei schematic lcd inverter dell a21l A32L Socket AM2
Contextual Info: A B C D E 1 1 LC2 Schematic 2 2 Pentium-M RS400MD+SB400 DATE: Apr. 7th Revision: 2.0 3 3 4 4 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL AND TRADE SECRET INFORMATION. THIS SHEET MAY NOT BE TRANSFERED FROM THE CUSTODY OF THE COMPETENT DIVISION OF R&D

Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.