AO4447
Abstract: AO4447L
Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard
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AO4447
AO4447
AO4447L
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transistor d452
Abstract: d452 TRANSISTOR D452 D452 ALPHA
Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. AO4447 and
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AO4447
AO4447/L
AO4447L
-AO4447L
transistor d452
d452 TRANSISTOR
D452
D452 ALPHA
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Untitled
Abstract: No abstract text available
Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard
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Original
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PDF
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AO4447
AO4447
AO4447L
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AO4447
Abstract: AO4447L
Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. AO4447 and
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Original
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PDF
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AO4447
AO4447/L
AO4447
AO4447L
-AO4447L
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Untitled
Abstract: No abstract text available
Text: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard
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Original
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PDF
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AO4447
AO4447
AO4447L
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