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    AO4801 Search Results

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    AO4801 Price and Stock

    Alpha & Omega Semiconductor AO4801

    MOSFET 2P-CH 30V 5A 8SOIC
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    Alpha & Omega Semiconductor AO4801L

    MOSFET 2P-CH 30V 5A 8SOIC
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    Alpha & Omega Semiconductor AO4801A

    MOSFET 2P-CH 30V 5A 8SOIC
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    Alpha & Omega Semiconductor AO4801HL

    MOSFET 2P-CH 30V 5A 8SOIC
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    Alpha & Omega Semiconductor AO4801AS

    MOSFET 2P-CH 30V 5A 8SOIC
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    AO4801 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO4801 Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4801 Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET (Replacement AO4801A) Original PDF
    AO4801A Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4801A Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET Original PDF
    AO4801AL Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 5A 8SOIC Original PDF
    AO4801AL_001 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 5A 8SOIC Original PDF
    AO4801L Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO4801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4801

    Abstract: No abstract text available
    Text: AO4801 30V P-Channel MOSFET General Description Product Summary The AO4801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a


    Original     		PDF AO4801 AO4801

    AO4801AL

    Abstract: 933 SOIC8
    Text: AO4801AL 30V P-Channel MOSFET General Description Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4801AL AO4801AL 933 SOIC8

    AO4801A

    Abstract: No abstract text available
    Text: AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4801A AO4801A

    AO4801A

    Abstract: No abstract text available
    Text: AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free


    Original     		PDF AO4801A AO4801A

    AO4801

    Abstract: No abstract text available
    Text: AOS Semiconductor Product Reliability Report AO4801/AO4801L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 25, 2006 1 This AOS product reliability report summarizes the qualification result for AO4801. Accelerated


    Original     		PDF AO4801/AO4801L, AO4801. AO4801 10-5eV Mil-Std-105D

    AO4801

    Abstract: AO4801L
    Text: AO4801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a


    Original     		PDF AO4801 AO4801 AO4801L

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM14801AB-N •General description ■Features ELM14801AB-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)


    Original     		PDF ELM14801AB-N ELM14801AB-N tempLM14801AB-N

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


    Original     		PDF

    AO4403

    Abstract: 4801 soic8 AO4400
    Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4403 AO4403 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 4801 soic8 AO4400

    NPN transistor c828

    Abstract: c828 npn transistor ST 950403 IT8282M zener st c903 d 9329 k8m800 ISS355 zener smd diode h9 st c632 Zener diode
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : AN5_K8_VIA K8N800+VT8235CE 2. PCI & IRQ & DMA Description : Version : 0.5 PP 3. Block Diagram :


    Original     		PDF K8N800 VT8235CE K8N800 NPN transistor c828 c828 npn transistor ST 950403 IT8282M zener st c903 d 9329 k8m800 ISS355 zener smd diode h9 st c632 Zener diode

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー P チャンネル MOSFET ELM14801AB-N •概要 ■特長 ELM14801AB-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=-5A Vgs=-10V MOSFET です。


    Original     		PDF ELM14801AB-N

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference

    AO4402

    Abstract: AO4800 mpf201 AO4400 AO4401
    Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4402 AO4402 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 AO4800 mpf201 AO4400 AO4401

    ELM14801AB

    Abstract: No abstract text available
    Text: 双 P 沟道 MOSFET ELM14801AB-N •概要 ■特点 ELM14801AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 48mΩ (Vgs=-10V) ·Rds(on) < 57mΩ (Vgs=-4.5V)


    Original     		PDF ELM14801AB-N ELM14801AB

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM54801AA-N •General description ■Features ELM54801AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)


    Original     		PDF ELM54801AA-N ELM54801AA-N M54801AA-N

    AO4400

    Abstract: AO4401 AO4800
    Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in


    Original     		PDF AO4800 AO4800 AO4400 AO4401 AO4801 AO4700 AO4701 AO4400 AO4401