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    Abstract: No abstract text available
    Text: AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


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    AO6400 AO6400 AO6400L AO6400L PDF

    AO6400L

    Abstract: AO6400 rl27
    Text: AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original
    AO6400 AO6400/L AO6400 AO6400L -AO6400L rl27 PDF