AO6407L Search Results

AO6407L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO6407 AO6407L

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

Original

PDF

AO6407 AO6407L