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Catalog Datasheet	MFG & Type	PDF	Document Tags
AO6422 Abstract: No abstract text available Text: AO6422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6422/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application.	Original	PDF	AO6422 AO6422/L AO6422 AO6422L -AO6422L

Catalog Datasheet

MFG & Type

PDF

Document Tags

AO6422

Abstract: No abstract text available
Text: AO6422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6422/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application.

Original

PDF

AO6422 AO6422/L AO6422 AO6422L -AO6422L