Untitled
Abstract: No abstract text available
Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This
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AO8820
AO8820/L
AO8820L
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Untitled
Abstract: No abstract text available
Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This
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AO8820
AO8820
AO8820L
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AO8820
Abstract: AO8820L
Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This
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AO8820
AO8820
AO8820L
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AO8820
Abstract: AO4707 AO8820L schottky 8a
Text: AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4707 uses advanced trench technology to provide excellent R DS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC
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AO4707
AO4707
AO8820
AO8820L
AO8820L
0E-01
0E-02
0E-03
0E-04
schottky 8a
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Untitled
Abstract: No abstract text available
Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This
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Original
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AO8820
AO8820
AO8820L
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PDF
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