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    AO8820L Search Results

    AO8820L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO8820L Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		PDF AO8820 AO8820/L AO8820L -AO8820L

    Untitled

    Abstract: No abstract text available
    Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		PDF AO8820 AO8820 AO8820L

    AO8820

    Abstract: AO8820L
    Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		PDF AO8820 AO8820 AO8820L

    AO8820

    Abstract: AO4707 AO8820L schottky 8a
    Text: AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4707 uses advanced trench technology to provide excellent R DS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC


    Original     		PDF AO4707 AO4707 AO8820 AO8820L AO8820L 0E-01 0E-02 0E-03 0E-04 schottky 8a

    Untitled

    Abstract: No abstract text available
    Text: AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8820 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This


    Original     		PDF AO8820 AO8820 AO8820L