Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AON3814 Search Results

    SF Impression Pixel

    AON3814 Price and Stock

    Alpha & Omega Semiconductor AON3814

    MOSFET 2N-CH 20V 8DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AON3814 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.26932
    		Buy Now
    TME AON3814 3
    • 1 -
    • 10 $0.53
    • 100 $0.42
    • 1000 $0.374
    • 10000 $0.344
    		Get Quote

    Alpha & Omega Semiconductor AON3814L

    MOSFET 2N-CH 20V 6A 8DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AON3814L Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    AON3814 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AON3814 Alpha & Omega Semiconductor Battery Protection - 20V N-Channel MOSFET Original PDF
    AON3814 Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AON3814 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		PDF AON3814 AON3814

    Untitled

    Abstract: No abstract text available
    Text: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		PDF AON3814 AON3814

    AON3814

    Abstract: No abstract text available
    Text: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		PDF AON3814 AON3814

    Untitled

    Abstract: No abstract text available
    Text: AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable


    Original     		PDF AON3814 AON3814

    AON3814L

    Abstract: AON3814 AON3814/L
    Text: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		PDF AON3814 AON3814/L AON3814 AON3814L -AON3814L

    AON3814

    Abstract: No abstract text available
    Text: AON3814 20V N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable


    Original     		PDF AON3814 AON3814

    Untitled

    Abstract: No abstract text available
    Text: AON3814 20V N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable


    Original     		PDF AON3814 AON3814

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


    Original     		PDF