AON5808
Abstract: No abstract text available
Text: AON5808 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5808 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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AON5808
AON5808
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AON5808
Abstract: No abstract text available
Text: AON5808 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5808 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected.
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AON5808
AON5808
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22
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