250HMA
Abstract: No abstract text available
Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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PDF
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AOT500L
AOT500
AOT500
250HMA
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AOT500
Abstract: gate to drain clamp
Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
|
PDF
|
AOT500L
AOT500
AOT500
gate to drain clamp
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