Untitled
Abstract: No abstract text available
Text: AP2308GEN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS ON 600mΩ ID 1.2A S ▼ RoHS Compliant & Halogen-Free
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AP2308GEN-HF
OT-23
100ms
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AP2308GEN
Abstract: n-channel SOT-23
Text: AP2308GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS ON 600mΩ ID 1.2A S SOT-23 G D Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2308GEN
OT-23
OT-23
AP2308GEN
n-channel SOT-23
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Untitled
Abstract: No abstract text available
Text: AP2308GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS ON 600mΩ ID 1.2A S SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP2308GEN
OT-23
OT-23
100ms
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Untitled
Abstract: No abstract text available
Text: AP2308GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS ON 600mΩ ID 1.2A S SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP2308GEN
OT-23
OT-23
100ms
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AP2308GEN
Abstract: No abstract text available
Text: AP2308GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower on-resistance ▼ 2KV ESD Capability BVDSS 20V RDS ON 600mΩ ID 1.2A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2308GEN
OT-23
OT-23
100ms
270/W
AP2308GEN
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Untitled
Abstract: No abstract text available
Text: AP2308GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS D Lower Gate Charge RDS ON Fast Switching Performance 20V 600m ID 1.2A Rating Units 20 V S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP2308GEN
OT-23
OT-23
100ms
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