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    AP30G120ASW Search Results

    AP30G120ASW Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AP30G120ASW Advanced Power Electronics N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C


    Original     		PDF AP30G120ASW Fig11.

    30G120ASW

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package


    Original     		PDF AP30G120ASW-HF-3 AP30G120AS 30G120ASW 30G120ASW

    AP30G120ASW

    Abstract: AP30G120 VCE-12 500V N-Channel IGBT TO-3P
    Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant IC


    Original     		PDF AP30G120ASW Fig11. AP30G120ASW AP30G120 VCE-12 500V N-Channel IGBT TO-3P