IC 571
Abstract: 118-70-74-591 394-70-74-591 LM335 OM350
Text: Cooled - Large Area APDs Electro-Optical Characteristics All specifications apply when APD is operated at 0ºC and at a gain of 300. 3 mm Active Diameter Bias Voltage Range† mm 3 5 10 16 (V) 1700 to 2000 Temperature Capacitance Dark Current Rise Time Noise Current
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100kHz
675nm
118the
LM335
350nm.
IC 571
118-70-74-591
394-70-74-591
OM350
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apd array
Abstract: No abstract text available
Text: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.
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S8550-02
S8550-02
SE-171
KAPD1031E01
apd array
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Untitled
Abstract: No abstract text available
Text: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.
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S8550-02
S8550-02
KAPD1031E01
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30737LH-300 Series Low Capacitance Silicon Avalanche Photodiode in Leadless Ceramic Carrier SMT Package for High Volume Laser Meter and Range Finding Applications Key Features • Low capacitance, <1pF, for high
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C30737LH-300
C30737LH-Rev
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S13081
Abstract: APD Arrays
Text: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits
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org/abs/1003
6071v2
S13081
APD Arrays
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SSO-AD-500-TO52i
Abstract: No abstract text available
Text: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-500-TO52i
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-500-TO52
Avalanche photodiode APD
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Untitled
Abstract: No abstract text available
Text: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-500-TO52
50oltage
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TO52
Abstract: SSO-AD-230-TO52-S1
Text: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52-S1
TO52
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avalanche photodiode noise factor
Abstract: No abstract text available
Text: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52i
avalanche photodiode noise factor
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TO52 package
Abstract: No abstract text available
Text: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-500-TO52-S1
TO52 package
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nir source
Abstract: No abstract text available
Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-230-TO52
nir source
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-230-TO52
Avalanche photodiode APD
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InGaAs apd photodiode
Abstract: UDT Sensors Photodiode laser detector BPX-65
Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can
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C30955EH
Abstract: No abstract text available
Text: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these
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C30955EH
C30956EH
C30955EH,
C30956EH
C30954EH
DTS0308
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C30955EH
Abstract: No abstract text available
Text: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been
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C30954EH,
C30955EH,
C30956EH
C30954EH
C30956EH.
DTS0308
C30955EH
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Untitled
Abstract: No abstract text available
Text: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in
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C30737LH-500-92
Abstract: CERAMIC LEADLESS CHIP CARRIER
Text: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,
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C30737PH
C30737LH
C30737
C30737PH-LH-Rev
C30737LH-500-92
CERAMIC LEADLESS CHIP CARRIER
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C30902EH
Abstract: No abstract text available
Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This
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C30902
C30902EH
C30921EH
DTS0408
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Peltier
Abstract: apd 400- 700 nm peltier cooler peltier datasheet TO8 package
Text: SSO-ADH-1100-TO8P APD with Peltier - Cooler Special characteristics The SSO - AD - 1100 - TO8P is a thermoelectrically cooled APD with chip specially selected for low dark current and low "dark count rate". Applications include photon counting and other low light level sensing.
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SSO-ADH-1100-TO8P
Peltier
apd 400- 700 nm
peltier cooler
peltier datasheet
TO8 package
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