TO52 Search Results

"laser range finder"

Abstract: schematic photo sensor AD-230-9 LASER RANGE FINDER
Contextual Info: Pacific Silicon Sensor Series 9 Data Sheet Part Description AD230-9-TO52-S1 Order # 06-013 ACTIVE AREA: 0.042 mm 2 230 µm DIA Ø 2.54 PIN CIRCLE PIN 1 CATHODE Ø0.46 3 PL Ø 5.40 Ø 3.00 Ø 4.70 113° VIEWING ANGLE 2.70 FRONTSIDE VIEW 0.042 mm High Speed, Low Noise Avalanche Photodiode

nir source

Abstract: apd 400- 700 nm
Contextual Info: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm

nir source

Contextual Info: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)

avalanche photodiode noise factor

Contextual Info: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

UBR10000

Abstract: nir source
Contextual Info: SSO-AD-230 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 active area 1) 0,042 mm ∅ 230 µm

TO52 package

Contextual Info: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

nir source

Contextual Info: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance

apd 400- 700 nm

Contextual Info: SSO-AD-500 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 Active area 1) 0,196 mm ∅ 500 µm

Avalanche photodiode APD

Contextual Info: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Pacific Silicon Sensor

Abstract: PS0.25-5 TO52 package VAT-20 TO52
Contextual Info: PS0.25-5 TO52S1 PIN Photodiode Special characteristics: High Speed epitaxy Low Dark current 0,25 mm² active area Parameters: PS0.25-5 Ch Active Area 0.5 x 0.5 mm 0,25 mm 2 max. 4.0 nA typ. 0.5 nA typ. 1.8 pF Spectral Responsivity at 800 nm Shunt Resistance

"laser range finder"

Abstract: Silicon apd construction of photo diode AD800-9-TO52-S1
Contextual Info: Pacific Silicon Sensor Series 9 Data Sheet Part Description AD800-9-TO52-S1 Order # 06-026 ACTIVE AREA: 0.50 mm 2 800 µm DIA Ø 2.54 PIN CIRCLE PIN 1 CATHODE Ø0.46 3 PL Ø 3.00 Ø 4.70 101° VIEWING ANGLE 2.70 FRONTSIDE VIEW BACKSIDE VIEW DESCRIPTION APPLICATIONS

"laser range finder"

Abstract: APD, laser, range, finder Silicon apd AD100-8-TO52-S1
Contextual Info: Pacific Silicon Sensor Series 8 Data Sheet Part Description AD100-8-TO52-S1 Order # 06-035 ACTIVE AREA: 0.00785 mm 2 100 µm DIA Ø 2.54 PIN CIRCLE PIN 1 CATHODE Ø0.46 3 PL Ø 3.00 Ø 4.70 116° VIEWING ANGLE 2.70 FRONTSIDE VIEW PIN 4 CASE ±1 12.7 3 PL

Avalanche photodiode APD

Contextual Info: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance

Contextual Info: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Contextual Info: Pacific Silicon Sensor Series 5 Data Sheet Part Description PC0.55-5th-TO52-S1 Order # 03-281 ACTIVE AREA: 0.55 mm 2 0.84mm DIA Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 3.00 Ø 4.70 112° VIEWING ANGLE 2.90 FRONTSIDE VIEW BACKSIDE VIEW DESCRIPTION APPLICATIONS

Photo resistor

Contextual Info: SSO-AD-230-i Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52i : Parameters: Active area 0,042 mm2 ∅ 230 µm dark current 1) (M=100) max. 1,5 nA typ. 0,6 nA Total capacitance 1)

NTE2988

Contextual Info: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.

Pacific Silicon Sensor

Abstract: 25-5-TO52-S1
Contextual Info: Pacific Silicon Sensor Series 5 Data Sheet Part Description PS0.25-5-TO52-S1 Order # 03-210 ACTIVE AREA: 0.25mm 2 0.50mm X 0.50mm Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 5.40 Ø 3.00 Ø 4.70 119° VIEWING ANGLE 2.90 FRONTSIDE VIEW TSTG TOP Storage Temp

SSO-AD-500-TO52i

Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

AD800-11-TO52-S1

Abstract: UV diode 200 nm TO52S1 avalanche photodiode bias
Contextual Info: Pacific Silicon Sensor Series 11 Data Sheet Part Description AD800-11-TO52-S1 Order # 06-112 ACTIVE AREA: 0.50 mm 2 800 µm DIA Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø5.40 Ø3.90 64° VIEWING ANGLE FRONTSIDE VIEW PIN 4 CASE ±1 12.7 3 PL BACKSIDE VIEW

TO52S1

Abstract: alcohol sensor data sheet Pacific Silicon Sensor AD500-9 avalanche photodiode bias AD500 avalanche photodiode SSO-AD-500-9-TO52-S1 Silicon apd avalanche photodiode noise factor
Contextual Info: AD500-9 TO52S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency > 80 % at λ 760 - 910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: AD500-9 TO52S1 Active Area 0.196 mm2 Ø 500 µm max. 5 nA

Contextual Info: Pacific Silicon Sensor Series 5 Data Sheet Part Description PS0.9-5-TO52-S1 Order # 03-211 ACTIVE AREA: 0.90 mm 2 0.95mm X 0.95mm Ø 2.54 PIN CIRCLE PIN 1 ANODE Ø0.46 3 PL Ø 5.40 Ø 3.00 Ø 4.70 110° VIEWING ANGLE 2.90 FRONTSIDE VIEW ABSOLUTE MAXIMUM RATING

Contextual Info: r= 7 SGS-THOMSON [¡» IM IIL IC T M O * L4952 li. VOLTAGE REGULATOR FOR CAR RADIO APPLICATIONS PRO DU CT PREVIEW • OPERATION SUPPLY VOLTAGE 9.5 TO 28V ■ PEAK SUPPLY OVERVOLTAGE PULSE UP TO52V VS. GND . FIXED OUTPUT VOLTAGE OF 8.6 0.2V AND OUTPUT CURRENT UP TO 150mA

PC1-2-TO52

Contextual Info: Pacific Silicon Sensor Series 2 Data Sheet Part Description PC1-2-TO52 Order # 03-185 PIN 1 CATHODE ACTIVE AREA: 1mm 2 1.13mm DIA Ø2.54 PIN CIRCLE 3.70 Ø0.46 2PL Ø5.40 Ø4.70 Ø3.90 65° VIEWING ANGLE 1.56 SQ 1.50 12.7 2PL PIN 2 ANODE/CASE ±1 FRONTSIDE VIEW