APD S11519 Search Results
APD S11519 Datasheets Context Search
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Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain |
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D-82211 KAPD0001E05 | |
Contextual Info: 赤外高感度 Si APD S11519シリーズ 近赤外高感度 MEMS構造を応用 当社は、フォトダイオードの裏面にMEMS構造を形成することによって、近赤外域で高感度を実現したSi検出器を開発しまし た。S11519シリーズは、近赤外域の感度を向上させたSi APDです。 |
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S11519ã S8890ã KAPDB0185JA KAPDB0190JA S11519-30 S11519-10 KAPDB0191JA | |
S12926
Abstract: S12926-05
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1NA101
Abstract: S8890 APD S11519
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S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519 | |
Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region. |
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S11519 S8890 SE-171 KAPD1028E01 | |
UAA 1006Contextual Info: 浜松ホトニクスの HOT な情報マガジン[ハマホット] 2010 夏 vol.6 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL:053-452-2141 FAX:053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月 代表取締役社長就任 |
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R7600U-300
Abstract: MOST150 S11518
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G11608 G11608-256DA G11608-512DA DE128228814 R7600U-300 MOST150 S11518 | |
H10769A
Abstract: H10770A H7422
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S11510 R9876, R11540 photomultiD-82211 DE128228814 H10769A H10770A H7422 |