APD S11519 Search Results

APD S11519 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
NR8360JP-BC-AZ		Renesas Electronics Corporation	φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC
NR8800FS-CB-AZ		Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR8300FP-CC-AZ		Renesas Electronics Corporation	1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module
NR8800FS-CB-AZ/SH		Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR4211TH-AZ		Renesas Electronics Corporation	Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications

APD S11519 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain	Original	PDF	D-82211 KAPD0001E05
Untitled Abstract: No abstract text available Text: 赤外高感度 Si APD S11519シリーズ近赤外高感度 MEMS構造を応用当社は、フォトダイオードの裏面にMEMS構造を形成することによって、近赤外域で高感度を実現したSi検出器を開発しました。S11519シリーズは、近赤外域の感度を向上させたSi APDです。	Original	PDF	S11519ã S8890ã KAPDB0185JA KAPDB0190JA S11519-30 S11519-10 KAPDB0191JA
S12926 Abstract: S12926-05 Text: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード内部増倍機能をもった高速・高感度のフォトダイオード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)	Original	PDF
1NA101 Abstract: S8890 APD S11519 Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.	Original	PDF	S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519
Untitled Abstract: No abstract text available Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.	Original	PDF	S11519 S8890 SE-171 KAPD1028E01
UAA 1006 Abstract: No abstract text available Text: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2010 夏 vol.6 発行元〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月代表取締役社長就任	Original	PDF
R7600U-300 Abstract: MOST150 S11518 Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07	Original	PDF	G11608 G11608-256DA G11608-512DA DE128228814 R7600U-300 MOST150 S11518
H10769A Abstract: H10770A H7422 Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS	Original	PDF	S11510 R9876, R11540 photomultiD-82211 DE128228814 H10769A H10770A H7422