S8890
Abstract: S8890-05 na40a S8890-02 S8890-10 Si apd photodiode S8890-30
Text: PHOTODIODE Si APD S8890シリーズ 近赤外域で高感度のAPD 特長 用途 l 高感度 l 高ゲイン l 低端子間容量 l YAGレーザの検出 l 長波長光の検出 • 一般定格／絶対最大定格 型名 S8890-02 S8890-05 S8890-10 S8890-15
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S8890
S8890-02
S8890-05
S8890-10
S8890-15
S8890-30
S8890
S8890-05
na40a
S8890-02
S8890-10
Si apd photodiode
S8890-30
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Untitled
Abstract: No abstract text available
Text: Si APD S8890シリーズ 近赤外域で高感度のAPD 特長 用途 高感度 YAGレーザの検出 長波長光の検出 高ゲイン 低端子間容量 構成／絶対最大定格 型名 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 外形寸法図/ 窓材*1
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S8890ã
S8890-02
S8890-05
S8890-10
S8890-15
S8890-30
KAPDB0066JB
KAPDB0067JA
S8890-02/-05/-10/-15
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l YAG laser detection l Long wavelength light detection l High sensitivity l High gain l Low terminal capacitance • General ratings / Absolute maximum ratings Type No. Dimensional
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S8890
S8890-02
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S8890-15
S8890-30
SE-171
KAPD1010E04
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S8890
Abstract: S8890-02 S8890-05 S8890-10
Text: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional
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S8890
S8890-02
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S8890-30
SE-171
KAPD1010E01
S8890-02
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S8890-10
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l YAG laser detection l Long wavelength light detection l High sensitivity l High gain l Low terminal capacitance • General ratings / Absolute maximum ratings Type No. Dimensional
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S8890
S8890-02
S8890-05
S8890-10
S8890-15
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SE-171
KAPD1010E02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional
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S8890
S8890-02
S8890-05
S8890-10
S8890-15
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SE-171
KAPD1010E01
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Untitled
Abstract: No abstract text available
Text: Si APD S8890 series Long wavelength type APD Features Applications High sensitivity YAG laser detection High gain Long wavelength light detection Low terminal capacitance Structure / Absolute maximum ratings Type no. S8890-02 S8890-05 S8890-10 S8890-15 S8890-30
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S8890
S8890-02
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KAPD1010E05
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S8890
Abstract: S8890-02 S8890-05 S8890-10
Text: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l YAG laser detection l Long wavelength light detection l High sensitivity l High gain l Low terminal capacitance • General ratings / Absolute maximum ratings Type No. Dimensional
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S8890
S8890-02
S8890-05
S8890-10
S8890-15
S8890-30
SE-171
KAPD1010E03
S8890-02
S8890-05
S8890-10
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional
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S8890
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S8890-10
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SE-171
KAPD1010E01
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S8890
Abstract: ami organ electronic organ transistor f8 pn sequence generator using transistor seven segment code transistor organ musical SYNTHESIZER schematic rhythm pattern generator
Text: AMI S8890 AMERICAN MICROSYSTEMS, INC.| RHYTHM GENERATOR Features General Description □ □ □ □ □ □ The rhythm generator is a counter-ROM specifically designed for electronic organ and other electronic in strum ents. This product contains an internal
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S8890
ami organ
electronic organ
transistor f8
pn sequence generator using transistor
seven segment code
transistor organ
musical SYNTHESIZER schematic
rhythm pattern generator
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1NA101
Abstract: S8890 APD S11519
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
1NA101
APD S11519
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H10769A
Abstract: H10770A H7422
Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS
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S11510
R9876,
R11540
photomultiD-82211
DE128228814
H10769A
H10770A
H7422
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555 7490 7447 7 segment LED display
Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS
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54S/74S
54H/74H
54L/74L
TIH101
555 7490 7447 7 segment LED display
SN76670
SNF10
rsn 3404
rsn 3305
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
mc2051
SN76131
SN76005
Ross Hill SCR Contactor
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Untitled
Abstract: No abstract text available
Text: 赤外高感度 Si APD S11519シリーズ 近赤外高感度 MEMS構造を応用 当社は、フォトダイオードの裏面にMEMS構造を形成することによって、近赤外域で高感度を実現したSi検出器を開発しまし た。S11519シリーズは、近赤外域の感度を向上させたSi APDです。
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S11519ã
S8890ã
KAPDB0185JA
KAPDB0190JA
S11519-30
S11519-10
KAPDB0191JA
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74L47
Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS
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CC-401
10072-41-US
54S/74S
74L47
a1208 transistor
74L03
sn76131
MC526L
eh12a
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
tg321
PJ 909
inverter LS600
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MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1
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9800-OERF-007
9800-OERF-005
MDM 6600
mt 1389 de
2061 D nikko
AR9344
bosch AL 1115 CV
denso alternator
7805/3A
bosch al 1450 dv
CATERPILLAR 207-1560
ba 4918
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UAA 1006
Abstract: No abstract text available
Text: 浜松ホトニクスの HOT な情報マガジン［ハマホット］ 2010 夏 vol.6 発行元 〒430-8587 静岡県浜松市中区砂山町325-6 日本生命浜松駅前ビル TEL：053-452-2141 FAX：053-456-7889 jp.hamamatsu.com キリトリ線 2009年12月 代表取締役社長就任
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SN76670
Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS
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CC-401
10072-41-US
54S/74S
54H/74H
54L/74L
TIH101
SN76670
sn76131
SNF10
The Integrated Circuits Catalog for Design Engineers
SN76005
inverter welder schematic
inverter LS600
sn76630
SN76660
sn76013
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
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KAPD1028E01
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R7600U-300
Abstract: MOST150 S11518
Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07
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G11608
G11608-256DA
G11608-512DA
DE128228814
R7600U-300
MOST150
S11518
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RSN 3306 H
Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS
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54S/74S
RSN 3306 H
ITT RZ2 g6
TDA 8841 IC
rsn 3404
SN76670
4L71
bu 2508 af equivalent
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
sn76131
a1208 transistor
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