M00X
Abstract: APM2600 AAAX APM2600C A102 sot-23-6 n-channel mosfet apm26
Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, D D S RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D Reliable and Rugged D G Top View of SOT-23-6 Lead Free and Green Devices Available
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APM2600C
OT-23-6
APM2600
M00X
APM2600
AAAX
APM2600C
A102
sot-23-6 n-channel mosfet
apm26
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M00X
Abstract: APM2600C APM2600 STD-020C
Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)
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APM2600C
OT-23-6
APM2600
APM2600
ANPEC-219°
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
M00X
APM2600C
STD-020C
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Untitled
Abstract: No abstract text available
Text: plerowTM APM2600-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 28.7 dB @ 2500 MHz = 27.3 dB @ 2700 MHz · NF fo 2.5 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply
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APM2600-P29
40x40mm
13x13mm)
APM2600
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Untitled
Abstract: No abstract text available
Text: Low Noise & High OIP3 Medium Power Amplifier Module SMD-type Last update: 2009. 12. 30. Ic V (mA) APM0400-P33 5.4 600 380 420 19 0.7 10.0 46 -10 -12 33 13x13x3.8 4G LTE APM0742-P29 5 380 698 787 34 0.9 6.6 47 -14 -8 29 10x10x3.8 CDMA Rx APM0837-P29 5 370
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APM0400-P33
13x13x3
APM0742-P29
10x10x3
APM0837-P29
APM0843-P29
APM0866-P29
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