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    cm03x

    Abstract: APM2603 M03X APM2603C STD-020C
    Text: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6


    Original     		PDF APM2603C -20V/-4A, OT-23-6 APM2603 APM2603 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 cm03x M03X APM2603C STD-020C

    AAAX

    Abstract: APM2603 APM2603C MOSFET P SOT-23-6 power sot-23-6 Marking aa DIODE MARKING CODE SOT236 320 sot236 MOSFET P-channel SOT-23-6 AB SOT-23-6
    Text: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, D D S RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • D Super High Dense Cell Design D G Top View of SOT-23-6


    Original     		PDF APM2603C -20V/-4A, OT-23-6 APM2603 AAAX APM2603 APM2603C MOSFET P SOT-23-6 power sot-23-6 Marking aa DIODE MARKING CODE SOT236 320 sot236 MOSFET P-channel SOT-23-6 AB SOT-23-6

    M03X

    Abstract: No abstract text available
    Text: APM2603C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =48mΩ(typ.) @ VGS=-4.5V RDS(ON)=85mΩ(typ.) @ VGS=-2.5V RDS(ON)=135mΩ(typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6


    Original     		PDF APM2603C -20V/-4A, OT-23-6 APM2603 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 M03X