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    APM2803

    Abstract: APM2803CG STD-020C
    Text: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6


    Original     		PDF APM2803CG -20V/-1 APM2803 APM2803CG STD-020C

    STD-020C

    Abstract: APM2803 APM2803CG
    Text: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6


    Original     		PDF APM2803CG -20V/-1 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 STD-020C APM2803 APM2803CG