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    Untitled

    Abstract: No abstract text available
    Text: APM9984CCG N-Channel Enhancement Mode MOSFET Pin Description Features • 8 20V/6A , RDS ON =18mΩ(typ.) @ VGS=4.5V RDS(ON)=22mΩ(typ.) @ VGS=2.5V • • • 6 5 1 Super High Dense Cell Design 2 3 Reliable and Rugged 4 Lead Free Available (RoHS Compliant)


    Original     		PDF APM9984CCG APM9984C OT-23-6

    JESD-22

    Abstract: A108 APM9984C APM9984CCG B102 GEM2928
    Text: APM9984CCG N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/6A, RDS ON =16mΩ(typ.) @ VGS=4.5V G2 S2 G1 S1 RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM


    Original     		PDF APM9984CCG JESD-22, JESD-22 A108 APM9984C APM9984CCG B102 GEM2928

    APM9984C

    Abstract: APM9984CCG STD-020C
    Text: APM9984CCG N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =16mΩ(typ.) @ VGS=4.5V RDS(ON)=19mΩ(typ.) @ VGS=2.5V • • • • Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM (8)


    Original     		PDF APM9984CCG APM9984C MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B MIL-STD-883D-1011 MIL-STD-883D-3015 100mA APM9984C APM9984CCG STD-020C