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    APPLICATION NOTE ANPS071E Search Results

    APPLICATION NOTE ANPS071E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    APPLICATION NOTE ANPS071E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3PN0603

    Abstract: ANPS071E IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0603 IPI100N06S3-03 3PN0603 ANPS071E IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2

    DIODE D29 -08

    Abstract: 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L08 IPI80N06S3L-08 DIODE D29 -08 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0

    3N06L13

    Abstract: Application Note ANPS071E ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified 13.1 ID 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 Application Note ANPS071E ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2

    ANPS071E

    Abstract: IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 3n06l
    Text: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 21.3 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L22 IPI25N06S3L-22 ANPS071E IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 3n06l

    D63A

    Abstract: ANPS071E IPB80N06S3-05 IPI80N06S3-05 IPP80N06S3-05 PG-TO263-3-2
    Text: IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.1 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3-05 IPI80N06S3-05, IPP80N06S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0605 IPI80N06S3-05 D63A ANPS071E IPB80N06S3-05 IPI80N06S3-05 IPP80N06S3-05 PG-TO263-3-2

    3pn06l03

    Abstract: ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L03 IPI100N06S3L-03 3pn06l03 ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053

    3PN06L04

    Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L04 IPI100N06S3L-04 3PN06L04 IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd

    3N0625

    Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
    Text: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0625 IPI25N06S3-25 3N0625 ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2

    3N0607

    Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
    Text: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0607 IPI80N06S3-07 3N0607 IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004

    smd diode code F45

    Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
    Text: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0616 IPI45N06S3-16 smd diode code F45 ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2

    3PN0604

    Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0604 IPI100N06S3-04 3PN0604 ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    3N06L13

    Abstract: ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 13.1 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2

    3qn04h2

    Abstract: IPB160N04S3-H2 ANPS071E PG-TO263-7-3
    Text: IPB160N04S3-H2 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on 2.1 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPB160N04S3-H2 PG-TO263-7-3 3QN04H2 3qn04h2 IPB160N04S3-H2 ANPS071E PG-TO263-7-3

    3QN0402

    Abstract: IPB180N04S3-02 ANPS071E ipb180n04
    Text: IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on 1.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPB180N04S3-02 PG-TO263-7-3 3QN0402 3QN0402 IPB180N04S3-02 ANPS071E ipb180n04

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Text: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898

    PN06L06

    Abstract: No abstract text available
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 PN06L06 PN06L06

    Untitled

    Abstract: No abstract text available
    Text: IPD30N06S3-24 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 24 mΩ ID 30 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S3-24 PG-TO252-3-11 3N0624

    4N03L03

    Abstract: No abstract text available
    Text: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPD90N03S4L-03 PG-TO252-3-11 4N03L03 4N03L03

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03

    3n06l

    Abstract: v5856
    Text: IPD30N06S3L-20 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 20 mΩ ID 30 A Features • N-channel - Logic Level - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S3L-20 PG-TO252-3-11 3N06L20 3n06l v5856

    QN0406

    Abstract: qn04 ipd80n04
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPD80N04S3-06 Product Summary V DS 40 V R DS on ,max 5.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD80N04S3-06 PG-TO252-3-11 QN0406 QN0406 qn04 ipd80n04

    Untitled

    Abstract: No abstract text available
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 PG-TO252-3-2 3N06L06