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    APPLICATION NOTE OF 15N120 Search Results

    APPLICATION NOTE OF 15N120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS15N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    TW015N120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    CA3079 Rochester Electronics LLC CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059 Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059-G Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy

    APPLICATION NOTE OF 15N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB15N120IHRWG NGTB15N120IHR/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB15N120FL2WG NGTB15N120FL2W/D PDF

    15N120C3D

    Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: HGTG15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 1-800-4-HARRIS 15N120C3D 15N120C3 LD26 RHRP15120 15N120C PDF

    15N120C3D

    Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: HGTG15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance


    Original     		HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 15N120C3D LD26 RHRP15120 15N120C PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The HGTG15N120C3D is a MOS gated high voltage switch­ ing device combining the best features of MOSFETs and


    OCR Scan     		HGTG15N120C3D HGTG15N120C3D 350ns 1-800-4-HARRIS PDF

    15N120C3

    Abstract: No abstract text available
    Text: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    OCR Scan     		HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3 PDF

    15N120C3

    Abstract: TP15N120 15n120
    Text: HAFRRIS HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    OCR Scan     		HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGTG15N120G3, HGT1S15N120C3 HGT1S15N120C3S 1-800-4-HARRIS 15N120C3 TP15N120 15n120 PDF

    HGT1S15N120C3

    Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C
    Text: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    Original     		HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C PDF

    15N120C3

    Abstract: HGT1S15N120C3 HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG
    Text: S E M I C O N D U C T O R HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    Original     		HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns 15N120C3 HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG PDF

    10n120

    Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
    Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp


    Original     		MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 10n120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120 PDF

    15n120

    Abstract: IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120
    Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E–POWER modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0


    Original     		MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 15n120 IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    AD7301A

    Abstract: AD7301 BT1358 CCIR-656 PAL-60 T-1004
    Text: a Multiformat SD, Progressive Scan/HDTV Video Encoder with Six NSV 12-Bit DACs ADV7300A/ADV7301A FEATURES High Definition Input Formats YCrCb Compliant to SMPTE293M 525 p , ITU-R.BT1358 (625 p), SMPTE274M (1080 i), SMPTE296M (720 p), and Any Other High Definition


    Original     		12-Bit ADV7300A/ADV7301A SMPTE293M BT1358 SMPTE274M SMPTE296M 10-Bit T-1004 p/625 p/720 AD7301A AD7301 BT1358 CCIR-656 PAL-60 PDF

    5n120

    Abstract: No abstract text available
    Text: a Multiformat SD, Progressive Scan/HDTV Video Encoder with Six 11-Bit DACs ADV7302A/ADV7303A FEATURES High Definition Input Formats YCrCb Compliant to SMPTE293M 525 p , ITU-R.BT1358 (625 p), SMPTE274M (1080 i), SMPTE296M (720 p), and Any Other High Definition


    Original     		11-Bit ADV7302A/ADV7303A SMPTE293M BT1358 SMPTE274M SMPTE296M T-1004 p/625 p/720 p/1080 5n120 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF