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    APPLICATION NOTE SO8 EXPOSED Search Results

    APPLICATION NOTE SO8 EXPOSED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    APPLICATION NOTE SO8 EXPOSED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nsmd smd

    Abstract: AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C
    Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat


    Original     		PDF AND8195/D nsmd smd AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C

    SO8FL

    Abstract: FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C
    Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat


    Original     		PDF AND8195/D SO8FL FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C

    3w high power white led driver circuit diagram

    Abstract: LM3404 LM3404HV psop-8 CMSH2-60 LM3404HVMA LM3404HVMR SLF10145T-470M1R4
    Text: National Semiconductor Application Note 1629 Chris Richardson May 2007 Introduction ible PSOP-8 package with an exposed thermal pad also called a die-attach paddle, or DAP will be compared to help the user estimate the die temperature under various conditions, and determine which package is best for their application.


    Original     		PDF LM3404HV AN-1629 3w high power white led driver circuit diagram LM3404 psop-8 CMSH2-60 LM3404HVMA LM3404HVMR SLF10145T-470M1R4

    SO8 package fairchild

    Abstract: so8 pcb pattern microfet
    Text: February 2002 Application Note 7527 Dual Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new dual MicroFET™ 3x2 package with two exposed drain pads provides a true surface-mount alternative that greatly improves thermal characteristics, high current handling capability and low on-resistance. These


    Original     		PDF

    SO8 package fairchild

    Abstract: No abstract text available
    Text: October 2001 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that


    Original     		PDF

    SO8 package fairchild

    Abstract: 021L2
    Text: February 2002 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TS982 Wide bandwidth, dual bipolar operational amplifier Datasheet - production data Description The TS982 device is a dual operational amplifier able to drive 200 mA down to voltages as low as 2.7 V. The SO-8 exposed-pad package allows high current output at high ambient temperatures


    Original     		PDF TS982 TS982 DocID009557

    Application Note AN821

    Abstract: 71622
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to


    Original     		PDF AN821 16-Mai-13 Application Note AN821 71622

    Untitled

    Abstract: No abstract text available
    Text: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate


    Original     		PDF Si7431DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7148DP Si7148DP-T1-E3 Si7148DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR836DP 2002/95/EC SiR836DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7938DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 60 0.007 at VGS = 4.5 V 60 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7938DP 2002/95/EC Si7938DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards


    Original     		PDF SiR466DP SiR466DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF Si7288DP 2002/95/EC Si7288DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7145DP 2002/95/EC Si7145DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 60 0.00265 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 45.5 nC • • • • Halogen-free TrenchFET Gen III Power MOSFET 100 % Rg Tested


    Original     		PDF SiR470DP SiR470DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR802DP 2002/95/EC SiR802DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc


    Original     		PDF SiR892DP SiR892DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR438DP SiR438DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7143DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7956DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 4.1 0.115 at VGS = 6 V 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low On-Resistance in New Low Thermal


    Original     		PDF Si7956DP Si7956DP-T1-E3 Si7956DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7942DP Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.049 at VGS = 10 V 5.9 0.060 at VGS = 6 V 5.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance


    Original     		PDF Si7942DP Si7942DP-T1-E3 Si7942DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7478DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 20 0.0088 at VGS = 4.5 V 18.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7478DP Si7478DP-T1-E3 Si7478DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12