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    APQ57SN10BH

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		APQ57SN10BH 00V/57A APQ57SN10BH-XXM0 APQ57SN10BH PDF

    ltbd

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		APQ57SN10BH 00V/57A ltbd PDF