76145P
Abstract: No abstract text available
Text: HUF76145P3, HUF76145S3S Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 45P UF76 5S3 bt A, V, 045 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
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HUF76145P3,
HUF76145S3S
76145P
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Untitled
Abstract: No abstract text available
Text: Key Parameters VRRM = 5000 IFAVM = 1410 IFSM = 17.5 VF0 = 1.13 rF = 0.44 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 14F5007 Doc. No. 5SYA 1126 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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14F5007
Apr-98
14F4407
14F3807
CH-5600
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3310 DIODE DATASHEET
Abstract: 21F2904
Text: Key Parameters VRRM = 3200 IFAVM = 2110 IFSM = 26.0 VF0 = 0.89 rF = 0.17 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 21F3204 Doc. No. 5SYA 1130 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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21F3204
Apr-98
21F2904
21F2604
CH-5600
3310 DIODE DATASHEET
21F2904
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transistor A7
Abstract: G28F640J5 A5D2 Apr98
Text: CIC-56µ µBGA-48D-A6-YAM 56-Bump µ BGA to a 48-Pin DIP Apr-98 µ BGA DEVICES: EXAMPLES PIN CONFIGURATION: G28F320J5 G28F640J5 SOCKET: Yamaichi NP291-07210-AC08338 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $310.00 $279.00 $263.50 $232.50 TYPICAL DIMENSIONS:
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CIC-56
BGA-48D-A6-YAM
56-Bump
48-Pin
Apr-98
G28F320J5
G28F640J5
NP291-07210-AC08338
transistor A7
G28F640J5
A5D2
Apr98
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76145P
Abstract: 76145S TA7614 AN9321 AN9322 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Text: HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76145P3,
HUF76145S3S
76145P
76145S
TA7614
AN9321
AN9322
HUF76145P3
HUF76145S3S
HUF76145S3ST
TB334
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
IN1190A diode
an 80771
hfa30pa60
SCR gate drive circuit
A6F diode
HFA120FA60
HF50A060
DT93-1
HFA16PB120
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5SDA11D1702
Abstract: No abstract text available
Text: Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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11D1702
Apr-98
11D1402
11D1102
Feb-98
CH-5600
5SDA11D1702
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10D1703
Abstract: 10D2303 10D2003
Text: Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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10D2303
Apr-98
10D2003
10D1703
CH-5600
10D2303
10D2003
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76145S
Abstract: 76145P TA7614 AN9321 HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Text: HUF76145P3, HUF76145S3S TM Data Sheet August 2000 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76145P3,
HUF76145S3S
76145S
76145P
TA7614
AN9321
HUF76145P3
HUF76145S3S
HUF76145S3ST
TB334
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76145S
Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Text: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology
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HUF76145P3,
HUF76145S3S
HUF76
145P3,
145S3S
06e-3
71e-3
07e-2
12e-2
76145S
76145P
HUF76145P3
HUF76145S3S
HUF76145S3ST
TB334
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5SDA24F2303
Abstract: 24F2303 24F1703 24F2003
Text: Key Parameters VRRM = 2300 IFAVM = 2350 IFSM = 29.0 VF0 = 0.84 rF = 0.13 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 24F2303 Doc. No. 5SYA 1131 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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24F2303
Apr-98
24F2003
24F1703
CH-5600
5SDA24F2303
24F2303
24F1703
24F2003
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06D4407
Abstract: No abstract text available
Text: Key Parameters VRRM = 5000 IFAVM = 690 IFSM = 7.0 VF0 = 1.10 rF = 1.01 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 06D5007 Doc. No. 5SYA 1125 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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06D5007
Apr-98
06D4407
06D3807
CH-5600
06D4407
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SCR gate drive circuit
Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
Text: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors
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INT-936
May-97
Jun-97
AN-936)
Jun-96
SCR gate drive circuit
DT94-15
variable frequency drive circuit diagram
dc-Motor controller 500w
600V igbt dc to dc buck converter
IR2130 with ac voltage controller
Drive circuit for IGBT using IR2130
dt94-9
SCR Gate Drive for ac to dc converter
GBAN-PVI-1
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dell
Abstract: dell server PowerEdge
Text: Dell.com and other Internet Infrastructure Lessons Kevin D. Libert Director, Enterprise Systems Group Dell Corporation Agenda l l l The Internet and Intranet at Dell.com The Internet & Intranet market - Trends & Opportunities Dell Internet Infrastructure Dell.com: End of Q2, 1998
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09d2004
Abstract: 09D2304 09-D2
Text: Key Parameters VRRM = 2600 IFAVM = 1020 IFSM = 11.5 VF0 = 0.87 rF = 0.39 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 09D2604 Doc. No. 5SYA 1121 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation
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09D2604
Apr-98
09D2304
09D2004
CH-5600
09d2004
09D2304
09-D2
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DT94-15
Abstract: DOWNLOAD DT94-15 IR2110 h bridge application notes GBAN-PVI-1 DT98-2 ballast Self-Oscillating h bridge ir2113 ir21xx Self-Oscillating SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
Text: Control ICs / MERs Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Control Integrated Circuits Description Document # Pages Date Control IC Selection Guides Application / Product / Feature Selection Guide
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May-96
IR2101
Feb-96
IR2102
IR2103
Jun-98
IR2104
DT94-15
DOWNLOAD DT94-15
IR2110 h bridge application notes
GBAN-PVI-1
DT98-2
ballast Self-Oscillating
h bridge ir2113
ir21xx
Self-Oscillating
SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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Untitled
Abstract: No abstract text available
Text: 1 4 3 RELEASED FOR PUBLICATION T H IS DRAWING I S UNPUBLISHED. 7 COPYRIGHT 19 BY AMP INCORPORATED. 2 ,19 LOC ALL RIGHTS RESERVED. DIST 50 AF DESCRIPTION LTR REL 1 CONTINUOUS L O C A T E D ON 2\ TO P RO D U C T I O N 0G1A-0105-98 DATE DWN AP VD APR98 MF
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07APR98
0G1A-0105-98
9APR97
27JUN96
APR-98
17105-3b0
BRA55
9APR97
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Untitled
Abstract: No abstract text available
Text: DO NOT SCALE THIRD ANGLE METRIC PROJECTION ALTERNATE FORM - 4 x 2 ,0 = 8 ,0 SE C TIO N 4 9 ,9 - •21 ,9- A -A SECTION B -B -1 , 7 ■21 ,9!X. § M ][M M ][M ^ ][M M ][M M ] [M M ] [M M ] [M HÜBIiliiii Biiiiiiiiii HIÜIBIBilH l i i l h i h i <^ s mm iiiiBiliüB
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AUG-03
APR-98
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SD-83689-9002
Abstract: Marking 24C3 58967E
Text: 10 1.340 MAX. SEE 2. S E AL S AND J A C K PO S T J A C K PO S T P AR T INTERFACIAL ^ FLANGE I. MARKING: NOTES; io SEAL UMI, DATE UNLESS CAN SHEET PA NE L 2 BE PURCHASED SEPARATELY: NO. 8304 1-0054. SEAL P AR T PART N O .83096-0004. NO. 8 3 0 9 6 - 0 0 0 5 .
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SD-83689-9002
2MAR99
26MAR99
30JUNE99
UM9-0303
-24C3
APR98
CB6R4P7S07
SD-83689-9002
Marking 24C3
58967E
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Untitled
Abstract: No abstract text available
Text: C "H Y U N D A I 16MX72 BIT SDRAM UNBUFFERED DIMM K-SERIES based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A1600/ HYM7V72A1601/ HYM7V72A1630/ HYM7V72A1631 DESCRIPTION The HYM7V72A1600/ 72A1601/ 72A1630/ 72A1631 K-Series are high speed 3.3-Volt synchronous
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16MX72
16Mx4
HYM7V72A1600/
HYM7V72A1601/
HYM7V72A1630/
HYM7V72A1631
72A1601/
72A1630/
72A1631
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C2018
Abstract: aX 010
Text: 1 3 4 THIS DRAWING 7 IS C O P Y R IG H T U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES ER V ED . D IS T r e v is i o n 50 AF : DESCRIPTION L TR REVISED PER 0G1A-0086-98 DATE DWN AP VD APR98 MF
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0G1A-0086-98
07APR9S
21JAN98
11JUN97
07-APR-98
arnp02644
/ws/dept2127/dwq2127/u
C2018
aX 010
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Untitled
Abstract: No abstract text available
Text: n 4 T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT 19 2 3 BY AMP I MCORPORATED. ,19 LOC A LL R I G H I S R ES E R V E D . D IST CM revision 53 : DESCRIPTION LTR REV PER EC O G 1 B - 0 0 6 2 - 9 8 DATE DWN
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OG1B-0062-98
3-2S-97
3-2S-97
27JUN96
06-APR-98
1S72B
/home/amp18726/ec62-i
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76145p
Abstract: No abstract text available
Text: HUF76145P3, HUF76145S3S Semiconductor January 1999 Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs t These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76145P3,
HUF76145S3S
00e-5
06e-3
07e-2
12e-2
06e-1
HUF76145
00e-3
50e-3
76145p
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