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    APT10026 Price and Stock

    Microchip Technology Inc APT10026JLL

    MOSFET N-CH 1000V 30A ISOTOP
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    Onlinecomponents.com APT10026JLL
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    Microchip Technology Inc APT10026JFLL

    MOSFET N-CH 1000V 30A ISOTOP
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    Microchip Technology Inc APT10026JFLL Tube 32 Weeks
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    NAC APT10026JFLL Tube 3
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    Microchip Technology Inc APT10026L2LLG

    MOSFET N-CH 1000V 38A 264 MAX
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    DigiKey APT10026L2LLG Tube 25
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    Microchip Technology Inc APT10026L2LLG Tube 26 Weeks
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    NAC APT10026L2LLG Tube 5
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    Microchip Technology Inc APT10026L2FLLG

    MOSFET N-CH 1000V 38A 264 MAX
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    DigiKey APT10026L2FLLG Tube 25
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    Microchip Technology Inc APT10026L2FLLG Tube 32 Weeks
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    Microchip Technology Inc APT10026DLL

    MOSFET MOS 7 1000 V 260 mOhm DIE, Projected EOL: 2044-04-30
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    Microchip Technology Inc APT10026DLL 26 Weeks
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    APT10026 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10026JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10026JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT10026JLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT10026JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT10026JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT10026L2FL Advanced Power Technology 1000V, 38A power MOS 7 transistor Original PDF
    APT10026L2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10026L2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT10026L2FLLG Microchip Technology MOSFET N-CH 1000V 38A 264 MAX Original PDF
    APT10026L2LL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT10026L2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT10026L2LLG Microchip Technology MOSFET N-CH 1000V 38A 264 MAX Original PDF
    APT10026RKVR Advanced Power Technology FET, Enhancement, N Channel, 2 VThreshold, ID 0.48 A Original PDF

    APT10026 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT10026JFLL

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026JFLL OT-227 APT10026JFLL PDF

    tc 7680

    Abstract: No abstract text available
    Text: APT10026L2FLL 1000V 38A 0.260W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT10026L2FLL O-264 O-264 MIL-STD-750 tc 7680 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026RKVR 1000V 0.48A 26.0W POWER MOS V TO-220 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10026RKVR O-220 O-220 Pulsed20) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.28 Ω POWER MOS 7 R FREDFET VDSS ID SO 27 -T 2 "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		APT10026JFLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026L2LL O-264 O-264 PDF

    tc 7680

    Abstract: fast diode SOT-227
    Text: APT10026JFLL 1000V 30A 0.140W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package


    Original     		APT10026JFLL OT-227 tc 7680 fast diode SOT-227 PDF

    APT10026JFLL

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.28 Ω POWER MOS 7 R FREDFET Symbol VDSS ID SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		APT10026JFLL OT-227 APT10026JFLL PDF

    tc 7680

    Abstract: No abstract text available
    Text: APT10026L2LL 1000V 38A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT10026L2LL O-264 O-264 tc 7680 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026JLL 1000V 30A 0.260W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT10026JLL OT-227 PDF

    APT10026JFLL

    Abstract: DSA003652
    Text: APT10026JFLL 1000V 30A 0.260Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026JFLL OT-227 APT10026JFLL DSA003652 PDF

    APT10026L2FLL

    Abstract: DSA003654
    Text: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026L2FLL O-264 O-264 APT100Package APT10026L2FLL DSA003654 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026JLL 1000V 30A 0.260Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026L2FLL O-264 PDF

    APT10026JN

    Abstract: No abstract text available
    Text: S S D D G G 27 2 T- SO APT10026JN 1000V 33A 0.26Ω S "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


    Original     		APT10026JN E145592 10026JN PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10026L2LL O-264 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    APT10026JN

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y 9 APT10026JN 1000V 33A 0.26£2 5 W 'U L Recognized" File No. E145592 S ISOTOP» POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd W


    OCR Scan     		APT10026JN E145592 10026JN APT10026JN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT10026JNR ISOTOP® 1000V 33A 0.26Q S Ú "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		APT10026JNR E145592 IL-STD-750 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: •R F j M AD VA NC ED po w er T e c h n o lo g y APT10026JN 1000V 33A 0.26Í2 S Ù " U L Recognized" File No. E145592 S ISOTOP' POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS


    OCR Scan     		APT10026JN E145592 10026JN APT10026JN OT-227 PDF

    APT10026JNR

    Abstract: APT10026
    Text: A d va n ced R o w er Te c h n o l o g y APT10026JNR 1000V ISOTOP® 33A 0.26Q "UL Recognized" File No. E l45592 S POWER MOS IV< AVALANCHE RATED ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		APT10026JNR El45592 MIL-STD-750 OT-227 2S7c10ci APT10026 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED PO W ER Te c h n o l o g y APT10026JNR 1000V 33A 0.26a ISOTOP POWER MOS IV' "UL Recognized" File No. E145592 S AVALANCHE RATED ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D 'dm V GS V GSM


    OCR Scan     		APT10026JNR E145592 APT10026JNR MIL-STD-750 OT-227 PDF

    diode on 026 LG

    Abstract: APT10026JNR
    Text: A dvanced P o w er r Te c h n o l o g y s iw m { APT10026JNR ISOTOP® 1000V t o 33A 0.26Í2 "UL Recognized" File No. E145592 S POWER MOS IVe CKAGE ¡2 N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS •o 'dm V GS V GSM


    OCR Scan     		APT10026JNR E145592 MIL-STD-750 OT-227 diode on 026 LG PDF

    10026JN

    Abstract: APT10026JN
    Text: O A dvanced P o w er Te c h n o l o g y D r »J APT10026JN ó s ^ ISOTOP* 1000V 33A 0.26H "UL Recognized" File No. E145592 (S POWER MOS ¡V( N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'o W 'lm V GS PD T J 'T STG All Ratings: T c = 25°C u nless otherw ise specified.


    OCR Scan     		APT10026JN E145592 10026JN OT-227 PDF

    LD 1610

    Abstract: APT9026DFN SML10026DFN APT10026DFN LE17 SML9026DFN
    Text: SEMELAB PLC bOE D • Ô1331Ô? □□□□STO m i 7GT « S f l L B MOS POWER 4 iFF i mi SEME 'T * 3 ° r - 2 .^ LAB SML9026DFN 900V 36.0A 0.260 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ’dm V GS PD T J 'T STG


    OCR Scan     		SML10026DFN SML9026DFN LD 1610 APT9026DFN APT10026DFN LE17 PDF