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    APT10057W Search Results

    APT10057W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10057WVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF

    APT10057W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-267

    Abstract: No abstract text available
    Text: APT10057WVR 30,000 10µS 100µS OPERATION HERE LIMITED BY RDS ON 10,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 70 1mS 5 10mS 1 100mS TC =+25°C TJ =+150°C SINGLE PULSE .5 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)


    Original     		PDF APT10057WVR 100mS O-267 TO-267

    Untitled

    Abstract: No abstract text available
    Text: APT10057WVR 17.3A 0.570Ω 1000V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10057WVR O-267 O-267

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT5012

    Abstract: No abstract text available
    Text: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature


    Original     		PDF APT5019HVR APT5026HVR APT4014HVR APT4018HVR O-258 APT20M42HVR APT1001R1AVR APT6032AVR APT6035AVR APT5012

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: • R r M APT10057WVR A d van ced po w er Te c h n o l o g y 1000v 17.3a 0.57a POWER M O S V ‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10057WVR 1000v O-267 APT10057W 00A/ps) IL-STD-750 D 92 M - 02 DIODE