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    APT10M11JVR Price and Stock

    Microchip Technology Inc APT10M11JVR

    MOSFET N-CH 100V 144A ISOTOP
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    Microchip Technology Inc APT10M11JVRU2

    MOSFET N-CH 100V 142A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10M11JVRU2 Bulk 32
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    • 100 $33.04
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    Avnet Americas APT10M11JVRU2 Tube 25 Weeks 32
    • 1 $33.04
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    • 100 $24.47778
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    Mouser Electronics APT10M11JVRU2 37
    • 1 $33.04
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    Newark APT10M11JVRU2 Bulk 32
    • 1 $33.04
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    Microchip Technology Inc APT10M11JVRU2
    • 1 $33.04
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    Onlinecomponents.com APT10M11JVRU2
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    TME APT10M11JVRU2 1
    • 1 $46.71
    • 10 $37.15
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    NAC APT10M11JVRU2 Tube 11
    • 1 $31.47
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    Richardson RFPD APT10M11JVRU2 32
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    Master Electronics APT10M11JVRU2
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    • 100 $30.23
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    Microchip Technology Inc APT10M11JVRU3

    MOSFET N-CH 100V 142A SOT227
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    DigiKey APT10M11JVRU3 Bulk 32
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    Avnet Americas APT10M11JVRU3 Tube 25 Weeks 32
    • 1 $33.04
    • 10 $33.04
    • 100 $24.47778
    • 1000 $24.47778
    • 10000 $24.47778
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    Mouser Electronics APT10M11JVRU3 31
    • 1 $33.04
    • 10 $33.04
    • 100 $33.04
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    Newark APT10M11JVRU3 Bulk 32
    • 1 $33.04
    • 10 $33.04
    • 100 $24.23
    • 1000 $24.23
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    Microchip Technology Inc APT10M11JVRU3
    • 1 $33.04
    • 10 $33.04
    • 100 $24.23
    • 1000 $22.03
    • 10000 $20.71
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    Onlinecomponents.com APT10M11JVRU3
    • 1 -
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    TME APT10M11JVRU3 1
    • 1 $46.71
    • 10 $37.15
    • 100 $37.15
    • 1000 $37.15
    • 10000 $37.15
    		Get Quote
    NAC APT10M11JVRU3 Tube 11
    • 1 $31.47
    • 10 $31.47
    • 100 $28.99
    • 1000 $26.87
    • 10000 $26.87
    		Buy Now
    Richardson RFPD APT10M11JVRU3 32
    • 1 -
    • 10 -
    • 100 $29
    • 1000 $29
    • 10000 $29
    		Buy Now
    Master Electronics APT10M11JVRU3
    • 1 -
    • 10 $44.06
    • 100 $30.23
    • 1000 $30.23
    • 10000 $30.23
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    APT10M11JVR Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10M11JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M11JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 144A ISOTOP Original PDF
    APT10M11JVRU2 Advanced Power Technology ISOTOP Boost chopper MOSFET Power Module Original PDF
    APT10M11JVRU2 Microsemi ISOTOP Boost chopper MOSFET Power Module Original PDF
    APT10M11JVRU2 Microsemi FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 142A SOT227 Original PDF
    APT10M11JVRU3 Advanced Power Technology ISOTOP Buck chopper MOSFET Power Module Original PDF
    APT10M11JVRU3 Microsemi ISOTOP Buck chopper MOSFET Power Module Original PDF
    APT10M11JVRU3 Microsemi FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 142A SOT227 Original PDF

    APT10M11JVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    isotop mosfet 100V

    Abstract: APT10M11JVRU2
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    MOSFET Module 100v 1000A

    Abstract: APT10M11JVRU3 SOT-227 heatsink
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227) MOSFET Module 100v 1000A APT10M11JVRU3 SOT-227 heatsink

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features  Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227)

    APT10M11JVRU3

    Abstract: MOSFET Module 100v 1000A
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode


    Original     		PDF APT10M11JVRU3 OT-227) APT10M11JVRU3 MOSFET Module 100v 1000A

    APT10M11JVRU2

    Abstract: MOSFET Module 100v 1000A
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original     		PDF APT10M11JVRU2 OT-227) APT10M11JVRU2 MOSFET Module 100v 1000A

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y 9 APT10M11JVR 100V 144A 0.01m POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10M11JVR OT-227 APT10M11 OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR ADVANCED W 7Æ P o w e r Te c h n o l o g y ioov i44a 0 .01 m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10M11JVR OT-227 45Nut E145592

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W 'æ APT pow er Te c h n o l o g y ' io o v 10 M 11 JV R i 44 a 0.011 q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF OT-227 APT10M11 E145592

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    I44A

    Abstract: No abstract text available
    Text: • R A dvanced r M po w er Tec h n o lo g y APT10M11J VR ioov i44a 0.011 q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10M11J OT-227 APT10M11JVR E145592 I44A