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    APT1101R2BFLL Search Results

    APT1101R2BFLL Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1101R2BFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT1101R2BFLL Unknown Power MOS 7, 1100V 10A, MOS-FET N-Channel enhanced Original PDF

    APT1101R2BFLL Datasheets Context Search

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    1200w

    Abstract: APT1101R2BFLL APT1101R2SFLL
    Text: APT1101R2BFLL APT1101R2SFLL 1100V 10A 1.200W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    PDF APT1101R2BFLL APT1101R2SFLL O-247 O-247 1200w APT1101R2BFLL APT1101R2SFLL

    APT1101R2BFLL

    Abstract: APT1101R2SFLL V30dd
    Text: APT1101R2BFLL APT1101R2SFLL 1100V 10A 1.200Ω POWER MOS 7 R FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT1101R2BFLL APT1101R2SFLL O-247 O-247 APT1101R2BFLL APT1101R2SFLL V30dd

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original
    PDF